Ultrafast carrier dynamics and optical pumping of lasing from Ar-plasma treated ZnO nanoribbons

Sarkar, Ketaki; Mukherjee, Souvik; Wiederrecht, Gary; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

doi:10.1088/1361-6528/aaa530

Title: Ultrafast carrier dynamics and optical pumping of lasing from Ar-plasma treated ZnO nanoribbons

Journal Article · Thu Jan 04 00:00:00 EST 2018 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/aaa530· OSTI ID:1427726

^[1];

^[1]; Wiederrecht, Gary ^[2]; Schaller, Richard D. ^[2]; Gosztola, David J. ^[2]; Stroscio, Michael A. ^[3]; Dutta, Mitra ^[4]

Univ. of Illinois, Chicago, IL (United States).Department of Electrical and Computer Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Univ. of Illinois, Chicago, IL (United States).Department of Electrical and Computer Engineering, Department of Physics, and Department of Bioengineering
Univ. of Illinois, Chicago, IL (United States).Department of Electrical and Computer Engineering and Department of Physics

We report that it is a well-known fact that ZnO has been one of the most studied wide bandgap II-VI materials by the scientific community specifically due to its potential for being used as exciton-related optical devices. Hence, realizing ways to increase the efficiency of these devices is important. We discuss a plasma treatment technique to enhance the near-band-edge (NBE) excitonic emission from ZnO based nanoribbons. We observed an enhancement of the NBE peak and simultaneous quenching of the visible emission peak resulting from the removal of surface traps on these ZnO nanoribbons. More importantly, we report here the associated ultrafast carrier dynamics resulting from this surface treatment. Femtosecond transient absorption spectroscopy was performed using pump-probe differential transmission measurements shedding new light on these improved dynamics with faster relaxation times. The knowledge obtained is important for improving the application of ZnO based optoelectronic devices. Finally, we also observed how these improved carrier dynamics have a direct effect on the threshold and efficiency of random lasing from the material.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; Air Force Research Laboratory (AFRL) - Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1427726

Journal Information:: Nanotechnology, Vol. 29, Issue 9; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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Cited By (1)

Improved Optical Property and Lasing of ZnO Nanowires by Ar Plasma Treatment Li, Haolin; Tang, Jilong; Lin, Fengyuan Nanoscale Research Letters, Vol. 14, Issue 1 https://doi.org/10.1186/s11671-019-3145-1	journal	September 2019

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Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
zinc oxide
near-band-edge emission
plasma etching
carrier dynamics
lasing