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Title: An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors

Abstract

A new electron-deficient unit with fused 5-heterocyclic ring was developed by replacing a cyclopenta-1,3-diene from electron-rich donor indacenodithiophene (IDT) with cyclohepta- 4,6-diene-1,3-diimde unit. The imide bridging endows BBI with fixed planar configuration and both low the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbit (LUMO) energy levels. Organic field-effect transistors (OFETs) based on BBI polymers exhibit electron mobility up to 0.34 cm2 V-1 s-1, which indicates that the BBI is a promising ntype semiconductor for optoelectronics.

Authors:
 [1];  [2]; ORCiD logo [1];  [1];  [1];  [3];  [3];  [4];  [2];  [1];  [2];  [1]
  1. Soochow Univ., Suzhou (China). Inst. of Functional Nano & Soft Materials (FUNSOM)
  2. Peking Univ., Beijing (China). Beijing National Lab. for Molecular Sciences, Key Lab. of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Key Lab. of Polymer Chemistry and Physics of Ministry of Education, Center for Soft Matter Science and Engineering, College of Chemistry and Molecular Engineering
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  4. Argonne National Lab. (ANL), Lemont, IL (United States). Science Div.
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Natural Science Foundation of China (NNSFC)
OSTI Identifier:
1427654
Alternate Identifier(s):
OSTI ID: 1398725; OSTI ID: 1411169
Grant/Contract Number:  
AC05-00OR22725; AC02-06CH11357; 21504062; 21572152
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Chemistry - A European Journal
Additional Journal Information:
Journal Volume: 23; Journal Issue: 59; Journal ID: ISSN 0947-6539
Publisher:
ChemPubSoc Europe
Country of Publication:
United States
Language:
English
Subject:
electron-deficient; fused rings; imide; ladder-type; 77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; electron-deficiency; imides; organic semiconductors; thiophenes

Citation Formats

Wu, Fu-Peng, Un, Hio-Ieng, Li, Yongxi, Hu, Hailiang, Yuan, Yi, Yang, Bin, Xiao, Kai, Chen, Wei, Wang, Jie-Yu, Jiang, Zuo-Quan, Pei, Jian, and Liao, Liang-Sheng. An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors. United States: N. p., 2017. Web. doi:10.1002/chem.201703415.
Wu, Fu-Peng, Un, Hio-Ieng, Li, Yongxi, Hu, Hailiang, Yuan, Yi, Yang, Bin, Xiao, Kai, Chen, Wei, Wang, Jie-Yu, Jiang, Zuo-Quan, Pei, Jian, & Liao, Liang-Sheng. An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors. United States. doi:10.1002/chem.201703415.
Wu, Fu-Peng, Un, Hio-Ieng, Li, Yongxi, Hu, Hailiang, Yuan, Yi, Yang, Bin, Xiao, Kai, Chen, Wei, Wang, Jie-Yu, Jiang, Zuo-Quan, Pei, Jian, and Liao, Liang-Sheng. Mon . "An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors". United States. doi:10.1002/chem.201703415. https://www.osti.gov/servlets/purl/1427654.
@article{osti_1427654,
title = {An Imide-Based Pentacyclic Building Block for n-Type Organic Semiconductors},
author = {Wu, Fu-Peng and Un, Hio-Ieng and Li, Yongxi and Hu, Hailiang and Yuan, Yi and Yang, Bin and Xiao, Kai and Chen, Wei and Wang, Jie-Yu and Jiang, Zuo-Quan and Pei, Jian and Liao, Liang-Sheng},
abstractNote = {A new electron-deficient unit with fused 5-heterocyclic ring was developed by replacing a cyclopenta-1,3-diene from electron-rich donor indacenodithiophene (IDT) with cyclohepta- 4,6-diene-1,3-diimde unit. The imide bridging endows BBI with fixed planar configuration and both low the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbit (LUMO) energy levels. Organic field-effect transistors (OFETs) based on BBI polymers exhibit electron mobility up to 0.34 cm2 V-1 s-1, which indicates that the BBI is a promising ntype semiconductor for optoelectronics.},
doi = {10.1002/chem.201703415},
journal = {Chemistry - A European Journal},
number = 59,
volume = 23,
place = {United States},
year = {Mon Oct 09 00:00:00 EDT 2017},
month = {Mon Oct 09 00:00:00 EDT 2017}
}

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