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Title: Z-Scheme NiTiO 3 /g-C 3 N 4 Heterojunctions with Enhanced Photoelectrochemical and Photocatalytic Performances under Visible LED Light Irradiation

Abstract

Direct Z-scheme NiTiO3/g-C3N4 heterojunctions were successfully assembled by using simple calcination method and the photoelectrochemical and photocatalytic performance were investigated by light emitting diode (LED). The photoanode composed by the heterojunction with about 50 wt% NiTiO3 content exhibits the best photoelectrochemical activity with photoconversion efficiency up to 0.066%, which is 4.4 and 3.13 times larger than NiTiO3 or g-C3N4. The remarkably enhanced photoelectrochemical and photocatalytic activity of the heterojunction can be due to the efficiently photogenerated electron-hole separation by a Z-scheme mechanism.

Authors:
 [1];  [2];  [1]; ORCiD logo [1];  [1]; ORCiD logo [2]
  1. School of Chemistry and Materials Science, Ludong University, Yantai 264025, PR China
  2. Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, Illinois 60439, United States
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Vehicle Technologies Office (EE-3V)
OSTI Identifier:
1427510
DOE Contract Number:
AC02-06CH11357
Resource Type:
Journal Article
Resource Relation:
Journal Name: ACS Applied Materials and Interfaces; Journal Volume: 9; Journal Issue: 47
Country of Publication:
United States
Language:
English

Citation Formats

Huang, Zhenyu, Zeng, Xiaoqiao, Li, Kai, Gao, Shanmin, Wang, Qingyao, and Lu, Jun. Z-Scheme NiTiO 3 /g-C 3 N 4 Heterojunctions with Enhanced Photoelectrochemical and Photocatalytic Performances under Visible LED Light Irradiation. United States: N. p., 2017. Web. doi:10.1021/acsami.7b12386.
Huang, Zhenyu, Zeng, Xiaoqiao, Li, Kai, Gao, Shanmin, Wang, Qingyao, & Lu, Jun. Z-Scheme NiTiO 3 /g-C 3 N 4 Heterojunctions with Enhanced Photoelectrochemical and Photocatalytic Performances under Visible LED Light Irradiation. United States. doi:10.1021/acsami.7b12386.
Huang, Zhenyu, Zeng, Xiaoqiao, Li, Kai, Gao, Shanmin, Wang, Qingyao, and Lu, Jun. Tue . "Z-Scheme NiTiO 3 /g-C 3 N 4 Heterojunctions with Enhanced Photoelectrochemical and Photocatalytic Performances under Visible LED Light Irradiation". United States. doi:10.1021/acsami.7b12386.
@article{osti_1427510,
title = {Z-Scheme NiTiO 3 /g-C 3 N 4 Heterojunctions with Enhanced Photoelectrochemical and Photocatalytic Performances under Visible LED Light Irradiation},
author = {Huang, Zhenyu and Zeng, Xiaoqiao and Li, Kai and Gao, Shanmin and Wang, Qingyao and Lu, Jun},
abstractNote = {Direct Z-scheme NiTiO3/g-C3N4 heterojunctions were successfully assembled by using simple calcination method and the photoelectrochemical and photocatalytic performance were investigated by light emitting diode (LED). The photoanode composed by the heterojunction with about 50 wt% NiTiO3 content exhibits the best photoelectrochemical activity with photoconversion efficiency up to 0.066%, which is 4.4 and 3.13 times larger than NiTiO3 or g-C3N4. The remarkably enhanced photoelectrochemical and photocatalytic activity of the heterojunction can be due to the efficiently photogenerated electron-hole separation by a Z-scheme mechanism.},
doi = {10.1021/acsami.7b12386},
journal = {ACS Applied Materials and Interfaces},
number = 47,
volume = 9,
place = {United States},
year = {Tue Nov 14 00:00:00 EST 2017},
month = {Tue Nov 14 00:00:00 EST 2017}
}