Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter

Derenzo, S.; Bourret, E.; Hanrahan, S.; Bizarri, G.

doi:10.1063/1.5018343

Title: Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c² dark matter

Journal Article · Wed Mar 21 00:00:00 EDT 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5018343· OSTI ID:1530346

^[1];

^[1]; Hanrahan, S. ^[1]; Bizarri, G. ^[2]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Cranfield Univ. (United Kingdom)

This paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c² mass range. Seven GaAs samples from two commercial suppliers and with different silicon and boron concentrations were studied for their low temperature optical and scintillation properties. All samples are n-type even at low temperatures and exhibit emission between silicon donors and boron acceptors that peaks at 1.33 eV (930 nm). The lowest excitation band peaks at 1.44 eV (860 nm), and the overlap between the emission and excitation bands is small. The X-ray excited luminosities range from 7 to 43 photons/keV. Thermally stimulated luminescence measurements show that n-type GaAs does not accumulate metastable radiative states that could cause afterglow. Further development and use with cryogenic photodetectors promises a remarkable combination of large target size, ultra-low backgrounds, and a sensitivity to electron recoils of a few eV that would be produced by DM particles as light as a few MeV/c².

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1530346

Alternate ID(s):: OSTI ID: 1427316

Journal Information:: Journal of Applied Physics, Vol. 123, Issue 11; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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Low temperature scintillation properties of Ga ₂ O ₃ Mykhaylyk, V. B.; Kraus, H.; Kapustianyk, V. Applied Physics Letters, Vol. 115, Issue 8 https://doi.org/10.1063/1.5119130	journal	August 2019
Comparative scintillation performance of EJ-309, EJ-276, and a novel organic glass Laplace, T. A.; Goldblum, B. L.; Bevins, J. E. Journal of Instrumentation, Vol. 15, Issue 11 https://doi.org/10.1088/1748-0221/15/11/p11020	journal	November 2020

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