Fabrication of ultrathin film capacitors by chemical solution deposition
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
We present that a facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of ≥1 mm2 and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Furthermore, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nm but are still macroscopically addressable with specific capacitance values >160 nF/mm2.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1426946
- Report Number(s):
- SAND-2007-1882J; applab; 526863
- Journal Information:
- Journal of Materials Research, Vol. 22, Issue 10; ISSN 0884-2914
- Publisher:
- Materials Research SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Chemical solution deposition of ferroelectric lead lanthanum zirconate titanate films on base-metal foils.
Sol-gel synthesis of high-quality SrRuO{sub 3} thin film electrodes suppressing the formation of detrimental RuO{sub 2} and the dielectric properties of integrated lead lanthanum zirconate titanate films.