Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays
Abstract
By using multiple growth steps that separate the nucleation and growth processes, we show that nearly intrinsic InN single nanocrystals of high optical quality can be formed on patterned GaN nanowire arrays by molecular beam epitaxy. The InN nanostructures form into well-defined hexagonal prisms with pyramidal tops. Micro-photoluminescence (μ-PL) is carried out at low temperature (LT: 28.2 K) and room temperature (RT: 285 K) to gauge the relative material quality of the InN nanostructures. Nanopyramidal prisms grown using a three-step growth method are found to show superior quantum efficiency. In conclusion, excitation and temperature dependent μ-PL demonstrates the very high quality and nearly intrinsic nature of the ordered InN nanostructure arrays.
- Authors:
-
[2];
[3]
- The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- The Ohio State Univ., Columbus, OH (United States). Dept. of Electrical and Computer Engineering and Dept. of Materials Science and Engineering
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- OSTI Identifier:
- 1426802
- Report Number(s):
- SAND-2018-2138J
Journal ID: ISSN 1528-7483; 661003
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Crystal Growth and Design
- Additional Journal Information:
- Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1528-7483
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY
Citation Formats
Golam Sarwar, A. T. M., Leung, Benjamin, Wang, George T., and Myers, Roberto C. Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays. United States: N. p., 2018.
Web. doi:10.1021/acs.cgd.7b01725.
Golam Sarwar, A. T. M., Leung, Benjamin, Wang, George T., & Myers, Roberto C. Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays. United States. doi:10.1021/acs.cgd.7b01725.
Golam Sarwar, A. T. M., Leung, Benjamin, Wang, George T., and Myers, Roberto C. Thu .
"Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays". United States. doi:10.1021/acs.cgd.7b01725. https://www.osti.gov/servlets/purl/1426802.
@article{osti_1426802,
title = {Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays},
author = {Golam Sarwar, A. T. M. and Leung, Benjamin and Wang, George T. and Myers, Roberto C.},
abstractNote = {By using multiple growth steps that separate the nucleation and growth processes, we show that nearly intrinsic InN single nanocrystals of high optical quality can be formed on patterned GaN nanowire arrays by molecular beam epitaxy. The InN nanostructures form into well-defined hexagonal prisms with pyramidal tops. Micro-photoluminescence (μ-PL) is carried out at low temperature (LT: 28.2 K) and room temperature (RT: 285 K) to gauge the relative material quality of the InN nanostructures. Nanopyramidal prisms grown using a three-step growth method are found to show superior quantum efficiency. In conclusion, excitation and temperature dependent μ-PL demonstrates the very high quality and nearly intrinsic nature of the ordered InN nanostructure arrays.},
doi = {10.1021/acs.cgd.7b01725},
journal = {Crystal Growth and Design},
issn = {1528-7483},
number = 2,
volume = 18,
place = {United States},
year = {2018},
month = {1}
}
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Figure 1.: Scanning electron micrograph of the GaN nanowires using two-step top-down etch process.
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