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Title: Synthesis of silicon containing materials using liquid hydrosilane compositions through direct injection

Abstract

An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.

Inventors:
; ;
Publication Date:
Research Org.:
NDSU Research Foundation, Fargo, ND (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1426793
Patent Number(s):
9,914,998
Application Number:
14/853,462
Assignee:
NDSU Research Foundation, Fargo, ND EE-LIBRARY
DOE Contract Number:
FG36-08G088160
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Sep 14
Country of Publication:
United States
Language:
English

Citation Formats

Srinivasan, Guruvenket, Sailer, Robert A., and Hoey, Justin. Synthesis of silicon containing materials using liquid hydrosilane compositions through direct injection. United States: N. p., 2018. Web.
Srinivasan, Guruvenket, Sailer, Robert A., & Hoey, Justin. Synthesis of silicon containing materials using liquid hydrosilane compositions through direct injection. United States.
Srinivasan, Guruvenket, Sailer, Robert A., and Hoey, Justin. Tue . "Synthesis of silicon containing materials using liquid hydrosilane compositions through direct injection". United States. doi:. https://www.osti.gov/servlets/purl/1426793.
@article{osti_1426793,
title = {Synthesis of silicon containing materials using liquid hydrosilane compositions through direct injection},
author = {Srinivasan, Guruvenket and Sailer, Robert A. and Hoey, Justin},
abstractNote = {An apparatus and a non-vapor-pressure dependent method of chemical vapor deposition of Si based materials using direct injection of liquid hydrosilane(s) are presented. Liquid silane precursor solutions may also include metal, non-metal or metalloid dopants, nanomaterials and solvents. An illustrative apparatus has a precursor solution and carrier gas system, atomizer and deposit head with interior chamber and a hot plate supporting the substrate. Atomized liquid silane precursor solutions and carrier gas moves through a confined reaction zone that may be heated and the aerosol and vapor are deposited on a substrate to form a thin film. The substrate may be heated prior to deposition. The deposited film may be processed further with thermal or laser processing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 13 00:00:00 EDT 2018},
month = {Tue Mar 13 00:00:00 EDT 2018}
}

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