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Title: Characterization of enhancement-mode two-channel triple quantum dot device fabricated from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1426614
Report Number(s):
SAND2017-2655C
651643
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the APS March Meeting held March 13-17, 2017.
Country of Publication:
United States
Language:
English

Citation Formats

Luhman, Dwight, S.A. Studenikin, D.G. Austing, L. Guadreau, A.S. Sacharjda, Lu, Tzu-Ming, Luhman, Dwight, Bethke, Donald Thomas, Wanke, Michael, Lilly, Michael, and Carroll, Malcolm S. Characterization of enhancement-mode two-channel triple quantum dot device fabricated from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.. United States: N. p., 2017. Web.
Luhman, Dwight, S.A. Studenikin, D.G. Austing, L. Guadreau, A.S. Sacharjda, Lu, Tzu-Ming, Luhman, Dwight, Bethke, Donald Thomas, Wanke, Michael, Lilly, Michael, & Carroll, Malcolm S. Characterization of enhancement-mode two-channel triple quantum dot device fabricated from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.. United States.
Luhman, Dwight, S.A. Studenikin, D.G. Austing, L. Guadreau, A.S. Sacharjda, Lu, Tzu-Ming, Luhman, Dwight, Bethke, Donald Thomas, Wanke, Michael, Lilly, Michael, and Carroll, Malcolm S. Wed . "Characterization of enhancement-mode two-channel triple quantum dot device fabricated from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.". United States. doi:. https://www.osti.gov/servlets/purl/1426614.
@article{osti_1426614,
title = {Characterization of enhancement-mode two-channel triple quantum dot device fabricated from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure.},
author = {Luhman, Dwight and S.A. Studenikin and D.G. Austing and L. Guadreau and A.S. Sacharjda and Lu, Tzu-Ming and Luhman, Dwight and Bethke, Donald Thomas and Wanke, Michael and Lilly, Michael and Carroll, Malcolm S.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Mar 01 00:00:00 EST 2017},
month = {Wed Mar 01 00:00:00 EST 2017}
}

Conference:
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  • We demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si 0.8Ge 0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication [T. M. Lu et al., Appl. Phys. Lett. 109, 093102 (2016)]. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triplemore » dot in a triangular configuration is induced leading to regions in the charge stability diagram where three addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart the single dot charge-senses the double dot with relative change of ~2% in the sensor current. We also highlight temporal drifting and metastability of the Coulomb oscillations. These effects are induced if the temperature environment of the device is not kept constant and arise from non-equilibrium charge redistribution and subsequent slow recovery.« less
  • Abstract not provided.
  • Abstract not provided.
  • We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double quantum dot can be tuned to a few-electron region. Additionally, the inter-dot coupling of the double quantum dot can be tuned to a large extent according to the voltage on the middle gate. The quantum dot is shown to be tunable from a single dot to a well-isolated double dot. To assess the stability of such design, the potential fluctuation induced by 1/f noise wasmore » measured. Based on the findings herein, the quantum dot design developed in the undoped GaAs/AlGaAs semiconductor shows potential for the future exploitation of nano-devices.« less