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Title: Modeling artificial graphene in Si/SiGe hetrostructures.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1426610
Report Number(s):
SAND2017-2643C
651638
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the APS March Meeting held March 13-17, 2017 in New Orleans, LA.
Country of Publication:
United States
Language:
English

Citation Formats

Maurer, Leon, Gamble, John King,, Moussa, Jonathan Edward, Tracy, Lisa A, Huang, S.-H., Chuang, Y., Li, J.-Y., Liu, C. W., and Lu, Tzu-Ming. Modeling artificial graphene in Si/SiGe hetrostructures.. United States: N. p., 2017. Web.
Maurer, Leon, Gamble, John King,, Moussa, Jonathan Edward, Tracy, Lisa A, Huang, S.-H., Chuang, Y., Li, J.-Y., Liu, C. W., & Lu, Tzu-Ming. Modeling artificial graphene in Si/SiGe hetrostructures.. United States.
Maurer, Leon, Gamble, John King,, Moussa, Jonathan Edward, Tracy, Lisa A, Huang, S.-H., Chuang, Y., Li, J.-Y., Liu, C. W., and Lu, Tzu-Ming. Wed . "Modeling artificial graphene in Si/SiGe hetrostructures.". United States. doi:. https://www.osti.gov/servlets/purl/1426610.
@article{osti_1426610,
title = {Modeling artificial graphene in Si/SiGe hetrostructures.},
author = {Maurer, Leon and Gamble, John King, and Moussa, Jonathan Edward and Tracy, Lisa A and Huang, S.-H. and Chuang, Y. and Li, J.-Y. and Liu, C. W. and Lu, Tzu-Ming},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Mar 01 00:00:00 EST 2017},
month = {Wed Mar 01 00:00:00 EST 2017}
}

Conference:
Other availability
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