Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

Ievlev, Anton; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

doi:10.1088/1361-6528/aaac9b

Title: Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

Journal Article · Thu Feb 22 00:00:00 EST 2018 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/aaac9b· OSTI ID:1426587

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^[2]; Agar, Joshua C. ^[3]; Velarde, Gabriel A. ^[3]; Martin, Lane W. ^[4];

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Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for Functional Imaging of Materials
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725; W911NF-14-1-0104; DMR-1708615; DMR-1608938; AC02-05CH11231

OSTI ID:: 1426587

Alternate ID(s):: OSTI ID: 1530341

Journal Information:: Nanotechnology, Vol. 29, Issue 15; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Non-conventional mechanism of ferroelectric fatigue via cation migration Ievlev, Anton V.; Kc, Santosh; Vasudevan, Rama K. Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-11089-w	journal	July 2019

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