Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography

Hill, Megan O.; Calvo-Almazan, Irene; Allain, Marc; Holt, Martin V.; Ulvestad, Andrew; Treu, Julian; Koblmüller, Gregor; Huang, Chunyi; Huang, Xiaojing; Yan, Hanfei; Nazaretski, Evgeny; Chu, Yong S.; Stephenson, G. Brian; Chamard, Virginie; Lauhon, Lincoln J.; Hruszkewycz, Stephan O.

doi:10.1021/acs.nanolett.7b04024

Title: Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography

Journal Article · Mon Jan 08 00:00:00 EST 2018 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.7b04024· OSTI ID:1425485

^[1]; Calvo-Almazan, Irene ^[2]; Allain, Marc ^[3]; Holt, Martin V. ^[4]; Ulvestad, Andrew ^[2]; Treu, Julian ^[5];

^[5]; Huang, Chunyi ^[1]; Huang, Xiaojing ^[6]; Yan, Hanfei ^[6]; Nazaretski, Evgeny ^[6]; Chu, Yong S. ^[6]; Stephenson, G. Brian ^[2]; Chamard, Virginie ^[3];

^[1]; Hruszkewycz, Stephan O. ^[2]

Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Aix-Marseille Univ., and CNRS/IN2P3, Marseille (France)
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Technische Univ. Munich (Germany). Walter Schottky Inst. and Physik Dept.
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)

III-As nanowires are candidates for near infrared light emitters and detectors that can be directly integrated onto silicon. However, nanoscale to microscale variations in structure, composition, and strain within a given nanowire, as well as variations between nanowires, pose challenges to correlating microstructure with device performance. In this work, we utilize coherent nano-focused x-rays to characterize stacking defects and strain in a single InGaAs nanowire supported on Si. By reconstructing diffraction patterns from the 2110 Bragg peak, we show that the lattice orientation varies along the length of the wire, while the strain field along the cross-section is largely unaffected, leaving the band structure unperturbed. Diffraction patterns from the 0110 Bragg peak are reproducibly reconstructed to create three-dimensional images of stacking defects and associated lattice strains, revealing sharp planar boundaries between different crystal phases of wurtzite (WZ) structure that contribute to charge carrier scattering. Phase retrieval is made possible by developing multi-angle Bragg projection ptychography (maBPP) to accommodate coherent nanodiffraction patterns measured at arbitrary overlapping positions at multiple angles about a Bragg peak, eliminating the need for scan registration at different angles. The penetrating nature of x-ray radiation, together with the relaxed constraints of maBPP, will enable in operando imaging of nanowire devices.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; European Union (EU); National Science Foundation (NSF); German Research Foundation (DFG); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357; SC0012704

OSTI ID:: 1425485

Alternate ID(s):: OSTI ID: 1426467

Report Number(s):: BNL-203363-2018-JAAM; 138261; TRN: US1802116

Journal Information:: Nano Letters, Vol. 18, Issue 2; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 43 works

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36 MATERIALS SCIENCE
Bragg ptychography
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coherent X-ray diffraction imaging
nanowire
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strain imaging
77 NANOSCIENCE AND NANOTECHNOLOGY