Controlling phase separation in vanadium dioxide thin films via substrate engineering

Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; Kittiwatanakul, Salinporn; Tung, I-Cheng; Zhu, Yi; Zhang, Jiawei; Bechtel, Hans A.; Martin, Michael C.; Carr, G. Lawrence; Lu, Jiwei; Wolf, Stuart A.; Wen, Haidan; Tao, Tiger H.; Liu, Mengkun

doi:10.1103/PhysRevB.96.161110

Title: Controlling phase separation in vanadium dioxide thin films via substrate engineering

Journal Article · Mon Oct 23 00:00:00 EDT 2017 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.96.161110· OSTI ID:1423692

Gilbert Corder, Stephanie N. ^[1]; Jiang, Jianjuan ^[2]; Chen, Xinzhong ^[1]; Kittiwatanakul, Salinporn ^[3]; Tung, I-Cheng ^[4]; Zhu, Yi ^[4]; Zhang, Jiawei ^[1]; Bechtel, Hans A. ^[5]; Martin, Michael C. ^[5]; Carr, G. Lawrence ^[6]; Lu, Jiwei ^[3]; Wolf, Stuart A. ^[7]; Wen, Haidan ^[4]; Tao, Tiger H. ^[8]; Liu, Mengkun ^[1]

Stony Brook Univ., NY (United States). Dept. of Physics
Chinese Academy of Sciences (CAS), Shanghai (China). Shanghai Inst. of Microsystem and Information Technology. State Key Lab. of Transducer Technology
Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
Univ. of Virginia, Charlottesville, VA (United States). Dept. of Materials Science and Engineering, and Dept. of Physics
Chinese Academy of Sciences (CAS), Shanghai (China). Shanghai Inst. of Microsystem and Information Technology. State Key Lab. of Transducer Technology; Univ. of Texas, Austin, TX (United States). Dept. of Mechanical Engineering

© 2017 American Physical Society. The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. In this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of TiO2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in VO2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system are directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); Brookhaven National Laboratory (BNL), Upton, NY (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

Grant/Contract Number:: AC02-06CH11357; SC0012704; SC0012509; AC02-05CH11231

OSTI ID:: 1423692

Alternate ID(s):: OSTI ID: 1402110; OSTI ID: 1426462; OSTI ID: 1526496

Report Number(s):: BNL-203352-2018-JAAM; PRBMDO; 140009; TRN: US1801832

Journal Information:: Physical Review B, Vol. 96, Issue 16; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 11 works

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Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
Near-field
vanadium dioxide
XRD
spectroscopy
phase-change
phase separation
substrate patterning