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Title: Mechanistic Understanding of Tungsten Oxide In-Plane Nanostructure Growth via Sequential Infiltration Synthesis

Abstract

Tungsten oxide (WO3-x) nanostructures with hexagonal in-plane arrangements were fabricated by sequential infiltration synthesis (SIS), using the selective interaction of gas phase precursors with functional groups in one domain of a block copolymer (BCP) self-assembled template. Such structures are highly desirable for various practical applications and as model systems for fundamental studies. The nanostructures were characterized by cross-sectional scanning electron microscopy, grazing-incidence small/wide-angle X-ray scattering (GISAXS/GIWAXS), and X-ray absorption near edge structure (XANES) measurements at each stage during the SIS process and subsequent thermal treatments, to provide a comprehensive picture of their evolution in morphology, crystallography and electronic structure. In particular, we discuss the critical role of SIS Al2O3 seeds toward modifying the chemical affinity and free volume in a polymer for subsequent infiltration of gas phase precursors. The insights into SIS growth obtained from this study are valuable to the design and fabrication of a wide range of targeted nanostructures.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Electrical Energy Storage (CEES)
Sponsoring Org.:
USDOE Office of Science - Energy Frontier Research Center - Center for Electrochemical Energy Science (CEES); Argonne National Laboratory - Advanced Photon Source; Argonne National Laboratory - Center for Nanoscale Materials; Materials Research Collaborative Access Team (MRCAT)
OSTI Identifier:
1426219
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 10; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Jae Jin, Suh, Hyo Seon, Zhou, Chun, Mane, Anil U., Lee, Byeongdu, Kim, Soojeong, Emery, Jonathan D., Elam, Jeffrey W., Nealey, Paul F., Fenter, Paul, and Fister, Timothy T. Mechanistic Understanding of Tungsten Oxide In-Plane Nanostructure Growth via Sequential Infiltration Synthesis. United States: N. p., 2018. Web. doi:10.1039/c7nr07642h.
Kim, Jae Jin, Suh, Hyo Seon, Zhou, Chun, Mane, Anil U., Lee, Byeongdu, Kim, Soojeong, Emery, Jonathan D., Elam, Jeffrey W., Nealey, Paul F., Fenter, Paul, & Fister, Timothy T. Mechanistic Understanding of Tungsten Oxide In-Plane Nanostructure Growth via Sequential Infiltration Synthesis. United States. doi:10.1039/c7nr07642h.
Kim, Jae Jin, Suh, Hyo Seon, Zhou, Chun, Mane, Anil U., Lee, Byeongdu, Kim, Soojeong, Emery, Jonathan D., Elam, Jeffrey W., Nealey, Paul F., Fenter, Paul, and Fister, Timothy T. Wed . "Mechanistic Understanding of Tungsten Oxide In-Plane Nanostructure Growth via Sequential Infiltration Synthesis". United States. doi:10.1039/c7nr07642h.
@article{osti_1426219,
title = {Mechanistic Understanding of Tungsten Oxide In-Plane Nanostructure Growth via Sequential Infiltration Synthesis},
author = {Kim, Jae Jin and Suh, Hyo Seon and Zhou, Chun and Mane, Anil U. and Lee, Byeongdu and Kim, Soojeong and Emery, Jonathan D. and Elam, Jeffrey W. and Nealey, Paul F. and Fenter, Paul and Fister, Timothy T.},
abstractNote = {Tungsten oxide (WO3-x) nanostructures with hexagonal in-plane arrangements were fabricated by sequential infiltration synthesis (SIS), using the selective interaction of gas phase precursors with functional groups in one domain of a block copolymer (BCP) self-assembled template. Such structures are highly desirable for various practical applications and as model systems for fundamental studies. The nanostructures were characterized by cross-sectional scanning electron microscopy, grazing-incidence small/wide-angle X-ray scattering (GISAXS/GIWAXS), and X-ray absorption near edge structure (XANES) measurements at each stage during the SIS process and subsequent thermal treatments, to provide a comprehensive picture of their evolution in morphology, crystallography and electronic structure. In particular, we discuss the critical role of SIS Al2O3 seeds toward modifying the chemical affinity and free volume in a polymer for subsequent infiltration of gas phase precursors. The insights into SIS growth obtained from this study are valuable to the design and fabrication of a wide range of targeted nanostructures.},
doi = {10.1039/c7nr07642h},
journal = {Nanoscale},
issn = {2040-3364},
number = ,
volume = 10,
place = {United States},
year = {2018},
month = {2}
}

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