Integrated circuits based on conjugated polymer monolayer

Li, Mengmeng; Mangalore, Deepthi Kamath; Zhao, Jingbo; Carpenter, Joshua H.; Yan, Hongping; Ade, Harald; Yan, He; Müllen, Klaus; Blom, Paul W.  M.; Pisula, Wojciech; de Leeuw, Dago M.; Asadi, Kamal

doi:10.1038/s41467-017-02805-5

Title: Integrated circuits based on conjugated polymer monolayer

Journal Article · Wed Jan 31 00:00:00 EST 2018 · Nature Communications

DOI:https://doi.org/10.1038/s41467-017-02805-5· OSTI ID:1426172

Li, Mengmeng ^[1]; Mangalore, Deepthi Kamath ^[2]; Zhao, Jingbo ^[3]; Carpenter, Joshua H. ^[4]; Yan, Hongping ^[5]; Ade, Harald ^[4]; Yan, He ^[3]; Müllen, Klaus ^[2]; Blom, Paul W. M. ^[2]; Pisula, Wojciech ^[6]; de Leeuw, Dago M. ^[7];

^[2]

Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany); Eindhoven Univ. of Technology (Netherlands). Molecular Materials and Nanosystems, Inst. for Complex Molecular Systems
Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany)
Hong Kong Univ. of Science and Technology, Clear Water Bay, Kowloon (Hong Kong). Dept. of Chemistry
North Carolina State Univ., Raleigh, NC (United States). Dept. of Physics and ORaCEL
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany); Lodz Univ. of Technology, Lodz (Poland). Dept. of Molecular Physics, Faculty of Chemistry
Delft Univ. of Technology (Netherlands). Faculty of Aerospace Engineering

It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier mobilities reaching 3 cm² V^-1 s^-1. The high performance is attributed to the strong interactions of the polymer chains present already in solution leading to pronounced edge-on packing and well-defined microstructure in the monolayer. The high reproducibility enables the integration of discrete unipolar PoM-FETs into inverters and ring oscillators. Real logic functionality has been demonstrated by constructing a 15-bit code generator in which hundreds of self-assembled PoM-FETs are addressed simultaneously. Lastly, our results provide the state-of-the-art example of integrated circuits based on a conjugated polymer monolayer, opening prospective pathways for bottom-up organic electronics.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); European Union (EU); National Science Centre, Poland; Alexander von Humboldt Foundation; Federal Ministry of Education and Research, Germany; National Science Foundation (NSF)

Grant/Contract Number:: AC02-76SF00515; AC02-05CH11231; UMO-2015/18/E/ST3/00322

OSTI ID:: 1426172

Journal Information:: Nature Communications, Vol. 9, Issue 1; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 56 works

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