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Title: Integrated circuits based on conjugated polymer monolayer

Abstract

It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier mobilities reaching 3 cm 2 V -1 s -1. The high performance is attributed to the strong interactions of the polymer chains present already in solution leading to pronounced edge-on packing and well-defined microstructure in the monolayer. The high reproducibility enables the integration of discrete unipolar PoM-FETs into inverters and ring oscillators. Real logic functionality has been demonstrated by constructing a 15-bit code generator in which hundreds of self-assembled PoM-FETs are addressed simultaneously. Lastly, our results provide the state-of-the-art example of integrated circuits based on a conjugated polymer monolayer, opening prospective pathways for bottom-up organic electronics.

Authors:
 [1];  [2];  [3];  [4];  [5];  [4];  [3];  [2];  [2];  [6];  [7]; ORCiD logo [2]
  1. Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany); Eindhoven Univ. of Technology (Netherlands). Molecular Materials and Nanosystems, Inst. for Complex Molecular Systems
  2. Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany)
  3. Hong Kong Univ. of Science and Technology, Clear Water Bay, Kowloon (Hong Kong). Dept. of Chemistry
  4. North Carolina State Univ., Raleigh, NC (United States). Dept. of Physics and ORaCEL
  5. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  6. Max Planck Inst. for Polymer Research, Ackermannweg, Mainz (Germany); Lodz Univ. of Technology, Lodz (Poland). Dept. of Molecular Physics, Faculty of Chemistry
  7. Delft Univ. of Technology (Netherlands). Faculty of Aerospace Engineering
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); European Union (EU); National Science Centre, Poland; Alexander von Humboldt Foundation; Federal Ministry of Education and Research, Germany; National Science Foundation (NSF)
OSTI Identifier:
1426172
Grant/Contract Number:  
AC02-76SF00515; AC02-05CH11231; UMO-2015/18/E/ST3/00322
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Electronic and spintronic devices; Electronic devices

Citation Formats

Li, Mengmeng, Mangalore, Deepthi Kamath, Zhao, Jingbo, Carpenter, Joshua H., Yan, Hongping, Ade, Harald, Yan, He, Müllen, Klaus, Blom, Paul W. M., Pisula, Wojciech, de Leeuw, Dago M., and Asadi, Kamal. Integrated circuits based on conjugated polymer monolayer. United States: N. p., 2018. Web. doi:10.1038/s41467-017-02805-5.
Li, Mengmeng, Mangalore, Deepthi Kamath, Zhao, Jingbo, Carpenter, Joshua H., Yan, Hongping, Ade, Harald, Yan, He, Müllen, Klaus, Blom, Paul W. M., Pisula, Wojciech, de Leeuw, Dago M., & Asadi, Kamal. Integrated circuits based on conjugated polymer monolayer. United States. doi:10.1038/s41467-017-02805-5.
Li, Mengmeng, Mangalore, Deepthi Kamath, Zhao, Jingbo, Carpenter, Joshua H., Yan, Hongping, Ade, Harald, Yan, He, Müllen, Klaus, Blom, Paul W. M., Pisula, Wojciech, de Leeuw, Dago M., and Asadi, Kamal. Wed . "Integrated circuits based on conjugated polymer monolayer". United States. doi:10.1038/s41467-017-02805-5. https://www.osti.gov/servlets/purl/1426172.
@article{osti_1426172,
title = {Integrated circuits based on conjugated polymer monolayer},
author = {Li, Mengmeng and Mangalore, Deepthi Kamath and Zhao, Jingbo and Carpenter, Joshua H. and Yan, Hongping and Ade, Harald and Yan, He and Müllen, Klaus and Blom, Paul W. M. and Pisula, Wojciech and de Leeuw, Dago M. and Asadi, Kamal},
abstractNote = {It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier mobilities reaching 3 cm2 V-1 s-1. The high performance is attributed to the strong interactions of the polymer chains present already in solution leading to pronounced edge-on packing and well-defined microstructure in the monolayer. The high reproducibility enables the integration of discrete unipolar PoM-FETs into inverters and ring oscillators. Real logic functionality has been demonstrated by constructing a 15-bit code generator in which hundreds of self-assembled PoM-FETs are addressed simultaneously. Lastly, our results provide the state-of-the-art example of integrated circuits based on a conjugated polymer monolayer, opening prospective pathways for bottom-up organic electronics.},
doi = {10.1038/s41467-017-02805-5},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {Wed Jan 31 00:00:00 EST 2018},
month = {Wed Jan 31 00:00:00 EST 2018}
}

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