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Title: Thermal imaging of high power diode lasers subject to back-irradiance

Abstract

In this study, CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.

Authors:
 [1];  [2];  [3];  [3];  [4];  [4]
  1. Univ. of Michigan, Ann Arbor, MI (United States). Department of Mechanical Engineering
  2. Univ. of Michigan, Ann Arbor, MI (United States). Department of Mechanical Engineering and Department of Electrical Engineering and Computer Science
  3. Lasertel Inc., Tucson, AZ (United States)
  4. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1426141
Alternate Identifier(s):
OSTI ID: 1424522
Report Number(s):
LLNL-JRNL-741541
Journal ID: ISSN 0003-6951; TRN: US1802232
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 10; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 47 OTHER INSTRUMENTATION

Citation Formats

Li, C., Pipe, K. P., Cao, C., Thiagarajan, P., Deri, R. J., and Leisher, P. O.. Thermal imaging of high power diode lasers subject to back-irradiance. United States: N. p., 2018. Web. doi:10.1063/1.5021658.
Li, C., Pipe, K. P., Cao, C., Thiagarajan, P., Deri, R. J., & Leisher, P. O.. Thermal imaging of high power diode lasers subject to back-irradiance. United States. doi:10.1063/1.5021658.
Li, C., Pipe, K. P., Cao, C., Thiagarajan, P., Deri, R. J., and Leisher, P. O.. Wed . "Thermal imaging of high power diode lasers subject to back-irradiance". United States. doi:10.1063/1.5021658.
@article{osti_1426141,
title = {Thermal imaging of high power diode lasers subject to back-irradiance},
author = {Li, C. and Pipe, K. P. and Cao, C. and Thiagarajan, P. and Deri, R. J. and Leisher, P. O.},
abstractNote = {In this study, CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.},
doi = {10.1063/1.5021658},
journal = {Applied Physics Letters},
number = 10,
volume = 112,
place = {United States},
year = {Wed Mar 07 00:00:00 EST 2018},
month = {Wed Mar 07 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on March 7, 2019
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