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Title: Synthesis and superconductivity of In-doped SnTe nanostructures

Abstract

In xSn 1-xTe is a time-reversal invariant candidate 3D topological superconductor derived from doping the topological crystalline insulator SnTe with indium. The ability to synthesize low-dimensional nanostructures of indium-doped SnTe is key for realizing the promise they hold in future spintronic and quantum information processing applications. But hitherto only bulk synthesized crystals and nanoplates have been used to study the superconducting properties. Here for the first time we synthesize In xSn 1-xTe nanostructures including nanowires and nanoribbons, which show superconducting transitions. In some of the lower dimensional morphologies, we observe signs of more than one superconducting transition and the absence of complete superconductivity. We propose that material inhomogeneity, such as indium inhomogeneity and possible impurities from the metal catalyst, is amplified in the transport characteristics of the smaller nanostructures and is responsible for this mixed behavior. Our work represents the first demonstration of In xSn 1-xTe nanowires with the onset of superconductivity, and points to the need for improving the material quality for future applications

Authors:
 [1];  [2];  [1];  [1];  [1]; ORCiD logo [1]
  1. Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, USA; Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, USA
  2. Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, USA; Department of Physics, Yale University, New Haven, Connecticut 06511, USA
Publication Date:
Research Org.:
Yale Univ., New Haven, CT (United States)
Sponsoring Org.:
USDOE; National Science Foundation (NSF)
OSTI Identifier:
1425934
Alternate Identifier(s):
OSTI ID: 1372712; OSTI ID: 1425933
Grant/Contract Number:
SC0014476
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 7; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Kumaravadivel, Piranavan, Pan, Grace A., Zhou, Yu, Xie, Yujun, Liu, Pengzi, and Cha, Judy J. Synthesis and superconductivity of In-doped SnTe nanostructures. United States: N. p., 2017. Web. doi:10.1063/1.4994293.
Kumaravadivel, Piranavan, Pan, Grace A., Zhou, Yu, Xie, Yujun, Liu, Pengzi, & Cha, Judy J. Synthesis and superconductivity of In-doped SnTe nanostructures. United States. doi:10.1063/1.4994293.
Kumaravadivel, Piranavan, Pan, Grace A., Zhou, Yu, Xie, Yujun, Liu, Pengzi, and Cha, Judy J. Sat . "Synthesis and superconductivity of In-doped SnTe nanostructures". United States. doi:10.1063/1.4994293. https://www.osti.gov/servlets/purl/1425934.
@article{osti_1425934,
title = {Synthesis and superconductivity of In-doped SnTe nanostructures},
author = {Kumaravadivel, Piranavan and Pan, Grace A. and Zhou, Yu and Xie, Yujun and Liu, Pengzi and Cha, Judy J.},
abstractNote = {InxSn1-xTe is a time-reversal invariant candidate 3D topological superconductor derived from doping the topological crystalline insulator SnTe with indium. The ability to synthesize low-dimensional nanostructures of indium-doped SnTe is key for realizing the promise they hold in future spintronic and quantum information processing applications. But hitherto only bulk synthesized crystals and nanoplates have been used to study the superconducting properties. Here for the first time we synthesize InxSn1-xTe nanostructures including nanowires and nanoribbons, which show superconducting transitions. In some of the lower dimensional morphologies, we observe signs of more than one superconducting transition and the absence of complete superconductivity. We propose that material inhomogeneity, such as indium inhomogeneity and possible impurities from the metal catalyst, is amplified in the transport characteristics of the smaller nanostructures and is responsible for this mixed behavior. Our work represents the first demonstration of InxSn1-xTe nanowires with the onset of superconductivity, and points to the need for improving the material quality for future applications},
doi = {10.1063/1.4994293},
journal = {APL Materials},
number = 7,
volume = 5,
place = {United States},
year = {Sat Jul 01 00:00:00 EDT 2017},
month = {Sat Jul 01 00:00:00 EDT 2017}
}

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  • In xSn 1-xTe is a time-reversal invariant candidate 3D topological superconductor derived from doping the topological crystalline insulator SnTe with indium. The ability to synthesize low-dimensional nanostructures of indium-doped SnTe is key for realizing the promise they hold in future spintronic and quantum information processing applications. But hitherto only bulk synthesized crystals and nanoplates have been used to study the superconducting properties. Here for the first time we synthesize In xSn 1-xTe nanostructures including nanowires and nanoribbons, which show superconducting transitions. In some of the lower dimensional morphologies, we observe signs of more than one superconducting transition and the absencemore » of complete superconductivity. We propose that material inhomogeneity, such as indium inhomogeneity and possible impurities from the metal catalyst, is amplified in the transport characteristics of the smaller nanostructures and is responsible for this mixed behavior. Our work represents the first demonstration of In xSn 1-xTe nanowires with the onset of superconductivity, and points to the need for improving the material quality for future applications« less
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