Synthesis and superconductivity of In-doped SnTe nanostructures

Kumaravadivel, Piranavan; Pan, Grace A.; Zhou, Yu; Xie, Yujun; Liu, Pengzi; Cha, Judy J.

doi:10.1063/1.4994293

Title: Synthesis and superconductivity of In-doped SnTe nanostructures

Journal Article · Sat Jul 01 00:00:00 EDT 2017 · APL Materials

DOI:https://doi.org/10.1063/1.4994293· OSTI ID:1425934

Kumaravadivel, Piranavan ^[1]; Pan, Grace A. ^[2]; Zhou, Yu ^[1]; Xie, Yujun ^[1]; Liu, Pengzi ^[1];

^[1]

Yale Univ., New Haven, CT (United States). Dept. of Mechanical Engineering and Materials Science, and Energy Sciences Inst.
Yale Univ., New Haven, CT (United States). Energy Sciences Inst., and Dept. of Physics

In_xSn_1-xTe is a time-reversal invariant candidate 3D topological superconductor derived from doping the topological crystalline insulator SnTe with indium. The ability to synthesize low-dimensional nanostructures of indium-doped SnTe is key for realizing the promise they hold in future spintronic and quantum information processing applications. But hitherto only bulk synthesized crystals and nanoplates have been used to study the superconducting properties. Here for the first time we synthesize In_xSn_1-xTe nanostructures including nanowires and nanoribbons, which show superconducting transitions. In some of the lower dimensional morphologies, we observe signs of more than one superconducting transition and the absence of complete superconductivity. We propose that material inhomogeneity, such as indium inhomogeneity and possible impurities from the metal catalyst, is amplified in the transport characteristics of the smaller nanostructures and is responsible for this mixed behavior. Our work represents the first demonstration of In_xSn_1-xTe nanowires with the onset of superconductivity, and points to the need for improving the material quality for future applications

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Research Organization:: Yale Univ., New Haven, CT (United States)

Sponsoring Organization:: USDOE; National Science Foundation (NSF)

Grant/Contract Number:: SC0014476

OSTI ID:: 1425934

Alternate ID(s):: OSTI ID: 1372712; OSTI ID: 1425933

Journal Information:: APL Materials, Vol. 5, Issue 7; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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