Reducing leakage current in semiconductor devices

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

Reducing leakage current in semiconductor devices

Patent · 06 March 2018

OSTI ID:1425209

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

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Research Organization:: Massachusetts Institute of Technology, Cambridge, MA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AR0000123

Assignee:: Massachusetts Institute of Technology (Cambridge, MA)

Patent Number(s):: 9,911,813

Application Number:: 14/651,012

OSTI ID:: 1425209

Country of Publication:: United States

Language:: English

References (16)

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