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Title: Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

Abstract

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17 cm -3 that exhibited mobilities as high as 16 cm 2V -1s -1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.

Authors:
 [1]; ORCiD logo [1];  [1];  [2]; ORCiD logo [1];  [1]; ORCiD logo [1];  [1]
  1. California Inst. of Technology (CalTech), Pasadena, CA (United States). Applied Physics and Materials Science
  2. California Inst. of Technology (CalTech), Pasadena, CA (United States). Joint Center for Artificial Photosynthesis; Helmholtz-Zentrum Berlin (HZB), (Germany). German Research Centre for Materials and Energy and Inst. for Solar Fuels
Publication Date:
Research Org.:
Arizona State Univ., Tempe, AZ (United States); California Inst. of Technology (CalTech), Pasadena, CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1425153
Grant/Contract Number:
EE0006335; AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Metamaterials; Nanophotonics and plasmonics; Nonlinear optics

Citation Formats

Emmer, Hal, Chen, Christopher T., Saive, Rebecca, Friedrich, Dennis, Horie, Yu, Arbabi, Amir, Faraon, Andrei, and Atwater, Harry A.. Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass. United States: N. p., 2017. Web. doi:10.1038/s41598-017-05012-w.
Emmer, Hal, Chen, Christopher T., Saive, Rebecca, Friedrich, Dennis, Horie, Yu, Arbabi, Amir, Faraon, Andrei, & Atwater, Harry A.. Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass. United States. doi:10.1038/s41598-017-05012-w.
Emmer, Hal, Chen, Christopher T., Saive, Rebecca, Friedrich, Dennis, Horie, Yu, Arbabi, Amir, Faraon, Andrei, and Atwater, Harry A.. Wed . "Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass". United States. doi:10.1038/s41598-017-05012-w. https://www.osti.gov/servlets/purl/1425153.
@article{osti_1425153,
title = {Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass},
author = {Emmer, Hal and Chen, Christopher T. and Saive, Rebecca and Friedrich, Dennis and Horie, Yu and Arbabi, Amir and Faraon, Andrei and Atwater, Harry A.},
abstractNote = {Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 1017 cm-3 that exhibited mobilities as high as 16 cm2V-1s-1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.},
doi = {10.1038/s41598-017-05012-w},
journal = {Scientific Reports},
number = 1,
volume = 7,
place = {United States},
year = {Wed Jul 05 00:00:00 EDT 2017},
month = {Wed Jul 05 00:00:00 EDT 2017}
}

Journal Article:
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