A metal-insulator transition study of VO2 thin films grown on sapphire substrates

Yu, Shifeng; Wang, Shuyu; Lu, Ming; Zuo, Lei

doi:10.1063/1.4997437

Title: A metal-insulator transition study of VO₂ thin films grown on sapphire substrates

Journal Article · Fri Dec 15 00:00:00 EST 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4997437· OSTI ID:1425083

Yu, Shifeng ^[1];

^[2]; Lu, Ming ^[3]; Zuo, Lei ^[1]

Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States). Dept. of Mechanical Engineering
Stony Brook Univ., NY (United States). Dept. of Mechanical Engineering
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials

In this paper, vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO₂) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidation condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. Finally, the fabricated VO₂ thin films showed the potential to be applied in the development of electrical sensors and other smart devices.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Science Foundation (NSF)

Grant/Contract Number:: SC0012704; IDBR 1152415

OSTI ID:: 1425083

Report Number(s):: BNL-203255-2018-JAAM; TRN: US1802037

Journal Information:: Journal of Applied Physics, Vol. 122, Issue 23; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 27 works

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Cited By (2)

Synthesis of phase pure vanadium dioxide (VO ₂ ) thin film by reactive pulsed laser deposition Bhardwaj, Devanshi; Goswami, Ankur; Umarji, A. M. Journal of Applied Physics, Vol. 124, Issue 13 https://doi.org/10.1063/1.5046455	journal	October 2018
Asymmetric hysteresis in vanadium dioxide thin films Currie, Marc; Wheeler, Virginia D.; Downey, Brian Optical Materials Express, Vol. 9, Issue 9 https://doi.org/10.1364/ome.9.003717	journal	January 2019

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Title: A metal-insulator transition study of VO2 thin films grown on sapphire substrates

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