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Title: Hydrogenation of passivated contacts

Patent ·
OSTI ID:1424753

Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
9,911,873
Application Number:
15/234,586
OSTI ID:
1424753
Resource Relation:
Patent File Date: 2016 Aug 11
Country of Publication:
United States
Language:
English

References (11)

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Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks journal October 2010
Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface journal May 2012
Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3 journal October 2011
Boron Emitter Passivation With Al2O3 and Al2O3/SiNx Stacks Using ALD Al2O3 journal January 2013
Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells journal March 2016
Atomic-layer-deposited aluminum oxide for the surface passivation of high-efficiency silicon solar cells conference May 2008