Hydrogenation of passivated contacts

Nemeth, William; Yuan, Hao-Chih; LaSalvia, Vincenzo; Stradins, Pauls; Page, Matthew R.

Hydrogenation of passivated contacts

Patent · 06 March 2018

OSTI ID:1424753

Nemeth, William; Yuan, Hao-Chih; LaSalvia, Vincenzo; Stradins, Pauls; Page, Matthew R.

Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-08GO28308

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Number(s):: 9,911,873

Application Number:: 15/234,586

OSTI ID:: 1424753

Country of Publication:: United States

Language:: English

References (7)

Influence of annealing and Al₂O₃ properties on the hydrogen-induced passivation of the Si/SiO₂ interface Dingemans, G.; Einsele, F.; Beyer, W. Journal of Applied Physics, Vol. 111, Issue 9, Article No. 093713 https://doi.org/10.1063/1.4709729	journal	May 2012
Surface passivation of phosphorus-diffused n⁺-type emitters by plasma-assisted atomic-layer deposited Al₂O₃ Hoex, B.; van de Sanden, M. C. M.; Schmidt, J. physica status solidi (RRL) - Rapid Research Letters, Vol. 6, Issue 1, p. 4-6 https://doi.org/10.1002/pssr.201105445	journal	October 2011
Atomic-layer-deposited aluminum oxide for the surface passivation of high-efficiency silicon solar cells Schmidt, Jan; Merkle, Agnes; Hoex, B. 2008 33rd IEEE Photovoltaic Specialists Conference https://doi.org/10.1109/PVSC.2008.4922636	conference	May 2008
Boron Emitter Passivation With Al₂O₃ and Al₂O₃/SiN_x Stacks Using ALD Al₂O₃ Richter, Armin; Benick, Jan; Hermle, Martin IEEE Journal of Photovoltaics, Vol. 3, Issue 1, p. 236-245 https://doi.org/10.1109/JPHOTOV.2012.2226145	journal	January 2013
Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells Nemeth, Bill; Young, David L.; Page, Matthew R. Journal of Materials Research, Vol. 31, Issue 6, p. 671-681 https://doi.org/10.1557/jmr.2016.77	journal	March 2016
Crystalline silicon surface passivation by the negative-charge-dielectric Al₂O₃ Hoex, B.; Schmidt, J.; van de Sanden, M. C. M. 2008 33rd IEEE Photovoltaic Specialists Conference https://doi.org/10.1109/PVSC.2008.4922635	conference	May 2008
Hydrogen induced passivation of Si interfaces by Al₂O₃ films and SiO₂/Al₂O₃ stacks Dingemans, G.; Beyer, W.; van de Sanden, M. C. M. Applied Physics Letters, Vol. 97, Issue 15, Article No. 152106 https://doi.org/10.1063/1.3497014	journal	October 2010

Similar Records

Fabrication of contacts for silicon solar cells including printing burn through layers

Patent · 2014 · OSTI ID:1135907

Doped passivated contacts

Patent · 2022 · OSTI ID:1893039

Germanium detector passivated with hydrogenated amorphous germanium

Patent · 1986 · OSTI ID:5717143

Related Subjects

36 MATERIALS SCIENCE

Hydrogenation of passivated contacts

Citation Formats

References (7)

Similar Records

Related Subjects