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Title: Silicon Carbide Film Growth Final Report CRADA No. TC-1060-94

Abstract

Lawrence Livermore National Laboratory (LLNL) discovered a novel process to selectively grow pseudornorphic, stoichiometric silicon carbide (SiC) on silicon wafers. This unique process has advantages over conventional techniques, including panerrung of the SiC thin films on silicon · wafers and processing at lower substrate temperatures ( <900°C). This process takes advantage of the reactivity ofC60 nanoclusters with silicon and the large difference in the reactivity of C60 with silicon and silicon dioxide. HP was interested in applying this process for incorporation of SiC in light emitting diodes and micromechanica1 devices. SiC has a very close lattice match with GaN, a promising material for blue light-emitting diodes (LEDs). Heteroepitaxial growth of GaN on SiC has a potential to produce high quality blue LED devices. SiC is chemically inert, strong, hard, and thermally stable. These properties also make it promising in rrncromechanica1 applications. The objective of this project was to produce thin film SiC on silicon wafers using LLNL's novel process, characteriz.e the SiC thin films in detail to optimize the growth process, and assess the applicability of this process to the production of high-quality blue LED's and micromechanical devices. Both parties performed detailed characterization measurements to optimize the process.

Authors:
 [1];  [2]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Hewlett-Packard Company, Palo Alto, CA (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1424675
Report Number(s):
LLNL-TR-746667
DOE Contract Number:  
AC52-07NA27344
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Amano, J., and Hamza, A. V. Silicon Carbide Film Growth Final Report CRADA No. TC-1060-94. United States: N. p., 2018. Web. doi:10.2172/1424675.
Amano, J., & Hamza, A. V. Silicon Carbide Film Growth Final Report CRADA No. TC-1060-94. United States. doi:10.2172/1424675.
Amano, J., and Hamza, A. V. Tue . "Silicon Carbide Film Growth Final Report CRADA No. TC-1060-94". United States. doi:10.2172/1424675. https://www.osti.gov/servlets/purl/1424675.
@article{osti_1424675,
title = {Silicon Carbide Film Growth Final Report CRADA No. TC-1060-94},
author = {Amano, J. and Hamza, A. V.},
abstractNote = {Lawrence Livermore National Laboratory (LLNL) discovered a novel process to selectively grow pseudornorphic, stoichiometric silicon carbide (SiC) on silicon wafers. This unique process has advantages over conventional techniques, including panerrung of the SiC thin films on silicon · wafers and processing at lower substrate temperatures ( <900°C). This process takes advantage of the reactivity ofC60 nanoclusters with silicon and the large difference in the reactivity of C60 with silicon and silicon dioxide. HP was interested in applying this process for incorporation of SiC in light emitting diodes and micromechanica1 devices. SiC has a very close lattice match with GaN, a promising material for blue light-emitting diodes (LEDs). Heteroepitaxial growth of GaN on SiC has a potential to produce high quality blue LED devices. SiC is chemically inert, strong, hard, and thermally stable. These properties also make it promising in rrncromechanica1 applications. The objective of this project was to produce thin film SiC on silicon wafers using LLNL's novel process, characteriz.e the SiC thin films in detail to optimize the growth process, and assess the applicability of this process to the production of high-quality blue LED's and micromechanical devices. Both parties performed detailed characterization measurements to optimize the process.},
doi = {10.2172/1424675},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {2}
}

Technical Report:

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