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Title: Metal-assisted etch combined with regularizing etch

Abstract

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

Inventors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Advanced Silicon Group, Inc., Lincoln, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1424402
Patent Number(s):
9,911,878
Application Number:
14/917,698
Assignee:
Advanced Silicon Group, Inc. (Lincoln, MA) GFO
DOE Contract Number:
EE0005323
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 27
Country of Publication:
United States
Language:
English

Citation Formats

Yim, Joanne, Miller, Jeff, Jura, Michael, Black, Marcie R., Forziati, Joanne, Murphy, Brian, and Magliozzi, Lauren. Metal-assisted etch combined with regularizing etch. United States: N. p., 2018. Web.
Yim, Joanne, Miller, Jeff, Jura, Michael, Black, Marcie R., Forziati, Joanne, Murphy, Brian, & Magliozzi, Lauren. Metal-assisted etch combined with regularizing etch. United States.
Yim, Joanne, Miller, Jeff, Jura, Michael, Black, Marcie R., Forziati, Joanne, Murphy, Brian, and Magliozzi, Lauren. Tue . "Metal-assisted etch combined with regularizing etch". United States. doi:. https://www.osti.gov/servlets/purl/1424402.
@article{osti_1424402,
title = {Metal-assisted etch combined with regularizing etch},
author = {Yim, Joanne and Miller, Jeff and Jura, Michael and Black, Marcie R. and Forziati, Joanne and Murphy, Brian and Magliozzi, Lauren},
abstractNote = {In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 06 00:00:00 EST 2018},
month = {Tue Mar 06 00:00:00 EST 2018}
}

Patent:

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