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Title: Ultrahigh thermal conductivity of isotopically enriched silicon

Authors:
ORCiD logo [1];  [1]; ORCiD logo [2];  [2];  [3]; ORCiD logo [3];  [4];  [5]
  1. National Research Center Kurchatov Institute, Moscow 123182, Russia
  2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, California 94720, USA
  3. Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
  4. VITCON Projectconsult GmbH, 07745 Jena, Germany
  5. Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1423925
Grant/Contract Number:
AC02-05CH11231
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 9; Related Information: CHORUS Timestamp: 2018-03-06 11:50:46; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, III, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, and Becker, Peter. Ultrahigh thermal conductivity of isotopically enriched silicon. United States: N. p., 2018. Web. doi:10.1063/1.5017778.
Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, III, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, & Becker, Peter. Ultrahigh thermal conductivity of isotopically enriched silicon. United States. doi:10.1063/1.5017778.
Inyushkin, Alexander V., Taldenkov, Alexander N., Ager, III, Joel W., Haller, Eugene E., Riemann, Helge, Abrosimov, Nikolay V., Pohl, Hans-Joachim, and Becker, Peter. Wed . "Ultrahigh thermal conductivity of isotopically enriched silicon". United States. doi:10.1063/1.5017778.
@article{osti_1423925,
title = {Ultrahigh thermal conductivity of isotopically enriched silicon},
author = {Inyushkin, Alexander V. and Taldenkov, Alexander N. and Ager, III, Joel W. and Haller, Eugene E. and Riemann, Helge and Abrosimov, Nikolay V. and Pohl, Hans-Joachim and Becker, Peter},
abstractNote = {},
doi = {10.1063/1.5017778},
journal = {Journal of Applied Physics},
number = 9,
volume = 123,
place = {United States},
year = {Wed Mar 07 00:00:00 EST 2018},
month = {Wed Mar 07 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on March 6, 2019
Publisher's Accepted Manuscript

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