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Title: Wide-Bandgap Microstructured Semiconductor Neutron Detector Final Technical Report

Abstract

The main objectives of the work discussed herein are to fabricate for the first time a wide-bandgap microstructed semiconductor neutron detector (WB-MSND) from SiC, GaN, and/or AlN. The most difficult aspect of the work will be the development of a method to micro-machine microstructures into the semiconductor substrate, e.g., mechanical or ICP-RIE plasma-etching methods. The focus of this project is to build a WB-MSND that has at least a thermal-neutron detection efficiency of 20% at an operating temperature of > 200C. A secondary effort is to package the WB-MSND with readout electronics that can operate within high-temperature and high-dose environments. WB-MSNDs fabrication methodology, specifically micromachining these hard semiconductor materials and diode-contact fabrication, raw-material supply-chain trade study, and WB-MSND packaging for wide-range temperature operation (coefficient of thermal expansion can cause packaging issues) were investigated and reported here. In phase two, further work will be pursued to fully develop the WB-MSND sensor and reduce its production-cost point, design and develop the readout electronics for the WB-MSND, and develop the technology to be arrayed in 1-cm 2 two dimensional arrays.

Authors:
 [1]
  1. Radiation Detection Technologies, Inc., Manhattan, KS (United States)
Publication Date:
Research Org.:
Radiation Detection Technologies, Inc., Manhattan, KS (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1423867
Report Number(s):
FINAL REPORT: 010 DOE
DOE Contract Number:  
SC0017148
Type / Phase:
SBIR (Phase I)
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; microstructured semiconductor neutron detector; high-efficiency neutron detector array; wide-bandgap semiconductor neutron detector; radiation hard

Citation Formats

Bellinger, Steven L. Wide-Bandgap Microstructured Semiconductor Neutron Detector Final Technical Report. United States: N. p., 2018. Web. doi:10.2172/1423867.
Bellinger, Steven L. Wide-Bandgap Microstructured Semiconductor Neutron Detector Final Technical Report. United States. doi:10.2172/1423867.
Bellinger, Steven L. Tue . "Wide-Bandgap Microstructured Semiconductor Neutron Detector Final Technical Report". United States. doi:10.2172/1423867. https://www.osti.gov/servlets/purl/1423867.
@article{osti_1423867,
title = {Wide-Bandgap Microstructured Semiconductor Neutron Detector Final Technical Report},
author = {Bellinger, Steven L.},
abstractNote = {The main objectives of the work discussed herein are to fabricate for the first time a wide-bandgap microstructed semiconductor neutron detector (WB-MSND) from SiC, GaN, and/or AlN. The most difficult aspect of the work will be the development of a method to micro-machine microstructures into the semiconductor substrate, e.g., mechanical or ICP-RIE plasma-etching methods. The focus of this project is to build a WB-MSND that has at least a thermal-neutron detection efficiency of 20% at an operating temperature of > 200C. A secondary effort is to package the WB-MSND with readout electronics that can operate within high-temperature and high-dose environments. WB-MSNDs fabrication methodology, specifically micromachining these hard semiconductor materials and diode-contact fabrication, raw-material supply-chain trade study, and WB-MSND packaging for wide-range temperature operation (coefficient of thermal expansion can cause packaging issues) were investigated and reported here. In phase two, further work will be pursued to fully develop the WB-MSND sensor and reduce its production-cost point, design and develop the readout electronics for the WB-MSND, and develop the technology to be arrayed in 1-cm2 two dimensional arrays.},
doi = {10.2172/1423867},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Mar 06 00:00:00 EST 2018},
month = {Tue Mar 06 00:00:00 EST 2018}
}

Technical Report:

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