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Title: Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals

Abstract

Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that dopedmore » silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.« less

Authors:
ORCiD logo [1];  [2]; ORCiD logo [1];  [2]; ORCiD logo [3]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
  2. Univ. of Minnesota, Minneapolis, MN (United States). Department of Mechanical Engineering
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials ; Northwestern Univ., Evanston, IL (United States). Department of Chemistry
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division
OSTI Identifier:
1423584
Grant/Contract Number:
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 17; Journal Issue: 10; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Silicon photonics; doping; infrared; optical switching; plasmonics

Citation Formats

Diroll, Benjamin T., Schramke, Katelyn S., Guo, Peijun, Kortshagen, Uwe R., and Schaller, Richard D.. Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals. United States: N. p., 2017. Web. doi:10.1021/acs.nanolett.7b03393.
Diroll, Benjamin T., Schramke, Katelyn S., Guo, Peijun, Kortshagen, Uwe R., & Schaller, Richard D.. Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals. United States. doi:10.1021/acs.nanolett.7b03393.
Diroll, Benjamin T., Schramke, Katelyn S., Guo, Peijun, Kortshagen, Uwe R., and Schaller, Richard D.. Mon . "Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals". United States. doi:10.1021/acs.nanolett.7b03393.
@article{osti_1423584,
title = {Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals},
author = {Diroll, Benjamin T. and Schramke, Katelyn S. and Guo, Peijun and Kortshagen, Uwe R. and Schaller, Richard D.},
abstractNote = {Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.},
doi = {10.1021/acs.nanolett.7b03393},
journal = {Nano Letters},
number = 10,
volume = 17,
place = {United States},
year = {Mon Sep 11 00:00:00 EDT 2017},
month = {Mon Sep 11 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
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