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Title: Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals

Abstract

Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that dopedmore » silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.« less

Authors:
 [1];  [2];  [1];  [2];  [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
  2. Univ. of Minnesota, Minneapolis, MN (United States). Department of Mechanical Engineering
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
OSTI Identifier:
1423584
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 17; Journal Issue: 10; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; silicon photonics; doping; infrared; optical switching; plasmonics

Citation Formats

Diroll, Benjamin T., Schramke, Katelyn S., Guo, Peijun, Kortshagen, Uwe R., Schaller, Richard D., and Northwestern Univ., Evanston, IL. Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals. United States: N. p., 2017. Web. doi:10.1021/acs.nanolett.7b03393.
Diroll, Benjamin T., Schramke, Katelyn S., Guo, Peijun, Kortshagen, Uwe R., Schaller, Richard D., & Northwestern Univ., Evanston, IL. Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals. United States. https://doi.org/10.1021/acs.nanolett.7b03393
Diroll, Benjamin T., Schramke, Katelyn S., Guo, Peijun, Kortshagen, Uwe R., Schaller, Richard D., and Northwestern Univ., Evanston, IL. Mon . "Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals". United States. https://doi.org/10.1021/acs.nanolett.7b03393. https://www.osti.gov/servlets/purl/1423584.
@article{osti_1423584,
title = {Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals},
author = {Diroll, Benjamin T. and Schramke, Katelyn S. and Guo, Peijun and Kortshagen, Uwe R. and Schaller, Richard D. and Northwestern Univ., Evanston, IL},
abstractNote = {Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Also, unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a sub-picosecond change of the dielectric function resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27% and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates sub-picosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting modulation of transmittance at telecommunications wavelengths. Lastly, the results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.},
doi = {10.1021/acs.nanolett.7b03393},
url = {https://www.osti.gov/biblio/1423584}, journal = {Nano Letters},
issn = {1530-6984},
number = 10,
volume = 17,
place = {United States},
year = {2017},
month = {9}
}

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Works referencing / citing this record:

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