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Title: (Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration

Abstract

We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure a power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2];  [3];  [3]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. SolAero Technologies Corp., Albuquerque, NM (United States)
  3. Univ. of Illinois, Urbana-Champaign, IL (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
U.S. Department of Energy, Advanced Research Projects Agency-Energy (ARPA-E)
OSTI Identifier:
1423195
Report Number(s):
NREL/JA-5J00-70703
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 8; Journal Issue: 2; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; III-V and concentrator photovoltaics; PV cells; semiconductor materials; solar energy; high temperature

Citation Formats

Perl, Emmett E., Simon, John, Friedman, Daniel J., Jain, Nikhil, Sharps, Paul, McPheeters, Claiborne, Sun, Yukun, Lee, Minjoo L., and Steiner, Myles A.. (Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration. United States: N. p., 2018. Web. doi:10.1109/JPHOTOV.2017.2783853.
Perl, Emmett E., Simon, John, Friedman, Daniel J., Jain, Nikhil, Sharps, Paul, McPheeters, Claiborne, Sun, Yukun, Lee, Minjoo L., & Steiner, Myles A.. (Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration. United States. doi:10.1109/JPHOTOV.2017.2783853.
Perl, Emmett E., Simon, John, Friedman, Daniel J., Jain, Nikhil, Sharps, Paul, McPheeters, Claiborne, Sun, Yukun, Lee, Minjoo L., and Steiner, Myles A.. Fri . "(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration". United States. doi:10.1109/JPHOTOV.2017.2783853.
@article{osti_1423195,
title = {(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration},
author = {Perl, Emmett E. and Simon, John and Friedman, Daniel J. and Jain, Nikhil and Sharps, Paul and McPheeters, Claiborne and Sun, Yukun and Lee, Minjoo L. and Steiner, Myles A.},
abstractNote = {We demonstrate dual-junction (Al)GaInP/GaAs solar cells designed for operation at 400 degrees C and 1000x concentration. For the top junction, we compare (Al)GaInP solar cells with room-temperature bandgaps ranging from 1.9 to 2.0 eV. At 400 degrees C, we find that ~1.9 eV GaInP solar cells have a higher open-circuit voltage and a lower sheet resistance than higher bandgap (Al)GaInP solar cells, giving them a clear advantage in a tandem configuration. Dual-junction GaInP/GaAs solar cells are fabricated, and we show temperature-dependent external quantum efficiency, illuminated current-voltage, and concentrator measurements from 25 degrees C to 400 degrees C. We measure a power conversion efficiency of 16.4% +/- 1% at 400 degrees C and 345 suns for the best dual-junction cell, and discuss multiple pathways to improve the performance further. After undergoing a 200 h soak at 400 degrees C, the dual-junction device shows a relative loss in efficiency of only ~1%.},
doi = {10.1109/JPHOTOV.2017.2783853},
journal = {IEEE Journal of Photovoltaics},
number = 2,
volume = 8,
place = {United States},
year = {Fri Jan 12 00:00:00 EST 2018},
month = {Fri Jan 12 00:00:00 EST 2018}
}

Journal Article:
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