skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Cantilever testing of sintered-silver interconnects

Abstract

Cantilever testing is an underutilized test method from which results and interpretations promote greater understanding of the tensile and shear failure responses of interconnects, metallizations, or bonded joints. The use and analysis of this method were pursued through the mechanical testing of sintered-silver interconnects that joined Ni/Au-plated copper pillars or Ti/Ni/Ag-plated silicon pillars to Ag-plated direct bonded copper substrates. Sintered-silver was chosen as the interconnect test medium because of its high electrical and thermal conductivities and high-temperature capability—attractive characteristics for a candidate interconnect in power electronic components and other devices. Deep beam theory was used to improve upon the estimations of the tensile and shear stresses calculated from classical beam theory. The failure stresses of the sintered-silver interconnects were observed to be dependent on test-condition and test-material-system. In conclusion, the experimental simplicity of cantilever testing, and the ability to analytically calculate tensile and shear stresses at failure, result in it being an attractive mechanical test method to evaluate the failure response of interconnects.

Authors:
ORCiD logo [1];  [2];  [3]; ORCiD logo [2];  [2];  [4];  [5]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Oak Ridge Associated Univ., Oak Ridge, TN (United States)
  3. Univ. of Mount Union, Alliance, OH (United States)
  4. Marlow Industries, Inc., Dallas, TX (United States)
  5. General Motors Global Research and Development, Warren, MI (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1423116
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Materials Science Materials in Electronics
Additional Journal Information:
Journal Volume: 29; Journal Issue: 2; Journal ID: ISSN 0957-4522
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wereszczak, Andrew A., Chen, Branndon R., Jadaan, Osama M., Oistad, Brian A., Modugno, Max C., Sharp, Jeffrey W., and Salvador, James R. Cantilever testing of sintered-silver interconnects. United States: N. p., 2017. Web. doi:10.1007/s10854-017-8063-3.
Wereszczak, Andrew A., Chen, Branndon R., Jadaan, Osama M., Oistad, Brian A., Modugno, Max C., Sharp, Jeffrey W., & Salvador, James R. Cantilever testing of sintered-silver interconnects. United States. doi:10.1007/s10854-017-8063-3.
Wereszczak, Andrew A., Chen, Branndon R., Jadaan, Osama M., Oistad, Brian A., Modugno, Max C., Sharp, Jeffrey W., and Salvador, James R. Thu . "Cantilever testing of sintered-silver interconnects". United States. doi:10.1007/s10854-017-8063-3. https://www.osti.gov/servlets/purl/1423116.
@article{osti_1423116,
title = {Cantilever testing of sintered-silver interconnects},
author = {Wereszczak, Andrew A. and Chen, Branndon R. and Jadaan, Osama M. and Oistad, Brian A. and Modugno, Max C. and Sharp, Jeffrey W. and Salvador, James R.},
abstractNote = {Cantilever testing is an underutilized test method from which results and interpretations promote greater understanding of the tensile and shear failure responses of interconnects, metallizations, or bonded joints. The use and analysis of this method were pursued through the mechanical testing of sintered-silver interconnects that joined Ni/Au-plated copper pillars or Ti/Ni/Ag-plated silicon pillars to Ag-plated direct bonded copper substrates. Sintered-silver was chosen as the interconnect test medium because of its high electrical and thermal conductivities and high-temperature capability—attractive characteristics for a candidate interconnect in power electronic components and other devices. Deep beam theory was used to improve upon the estimations of the tensile and shear stresses calculated from classical beam theory. The failure stresses of the sintered-silver interconnects were observed to be dependent on test-condition and test-material-system. In conclusion, the experimental simplicity of cantilever testing, and the ability to analytically calculate tensile and shear stresses at failure, result in it being an attractive mechanical test method to evaluate the failure response of interconnects.},
doi = {10.1007/s10854-017-8063-3},
journal = {Journal of Materials Science Materials in Electronics},
issn = {0957-4522},
number = 2,
volume = 29,
place = {United States},
year = {2017},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Test Results of Sintered Nanosilver Paste Die Attach for High-Temperature Applications
journal, January 2016

  • Croteau, Paul; Seal, Sayan; Witherell, Ryan
  • Journal of Microelectronics and Electronic Packaging, Vol. 13, Issue 1
  • DOI: 10.4071/imaps.492

Uniaxial ratcheting and fatigue behaviors of low-temperature sintered nano-scale silver paste at room and high temperatures
journal, September 2010

  • Wang, Tao; Chen, Gang; Wang, Yanping
  • Materials Science and Engineering: A, Vol. 527, Issue 24-25
  • DOI: 10.1016/j.msea.2010.07.012

Effect of depth span ratio on the behaviour of beams
journal, June 2014

  • Patel, Rakesh; Dubey, S. K.; Pathak, K. K.
  • International Journal of Advanced Structural Engineering, Vol. 6, Issue 2
  • DOI: 10.1007/s40091-014-0056-3

Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?
journal, January 2014


Uniqueness and Challenges of Sintered Silver as a Bonded Interface Material
journal, October 2014

  • Wereszczak, A. A.; Liang, Z.; Ferber, M. K.
  • Journal of Microelectronics and Electronic Packaging, Vol. 11, Issue 4
  • DOI: 10.4071/imaps.429