High-performance multilayer WSe2 field-effect transistors with carrier type control

Pudasaini, Pushpa Raj; Oyedele, Akinola; Zhang, Cheng; Stanford, Michael G.; Cross, Nicholas; Wong, Anthony T.; Hoffman, Anna N.; Xiao, Kai; Duscher, Gerd; Mandrus, David G.; Ward, Thomas Z.; Rack, Philip D.

doi:10.1007/s12274-017-1681-5

Title: High-performance multilayer WSe₂ field-effect transistors with carrier type control

Journal Article · Thu Jul 06 00:00:00 EDT 2017 · Nano Research

DOI:https://doi.org/10.1007/s12274-017-1681-5· OSTI ID:1376482

Pudasaini, Pushpa Raj ^[1]; Oyedele, Akinola ^[2]; Zhang, Cheng ^[1]; Stanford, Michael G. ^[3]; Cross, Nicholas ^[3]; Wong, Anthony T. ^[3]; Hoffman, Anna N. ^[3]; Xiao, Kai ^[4]; Duscher, Gerd ^[5]; Mandrus, David G. ^[5]; Ward, Thomas Z. ^[6]; Rack, Philip D. ^[1]

Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Univ. of Tennessee, Knoxville, TN (United States). Bredesen Center for Interdisciplinary Research and Graduate Education
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division

In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.

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Research Organization:: Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program; Gordon and Betty Moore Foundation (United States); National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725; SC0002136; GBMF4416; DMR-1410940

OSTI ID:: 1376482

Alternate ID(s):: OSTI ID: 1423050

Journal Information:: Nano Research, Vol. 11, Issue 2; ISSN 1998-0124

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 78 works

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Title: High-performance multilayer WSe2 field-effect transistors with carrier type control

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Title: High-performance multilayer WSe₂ field-effect transistors with carrier type control