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Title: II-VI Material Integration With Silicon for Detector and PV Applications

Abstract

Heteroepitaxial growth of high-quality II-VI-alloy materials on Si substrates is a well-established commercial growth process for infrared (IR) detector devices. However, it has only recently been recognized that these same processes may have important applications for production of high-efficiency photovoltaic devices. This submission reviews the process developments that have enabled effective heteroepitaxy of II-VI alloy materials on lattice-mismatched Si for IR detectors as a foundation to describe recent efforts to apply these insights to the fabrication of multijunction Si/CdZnTe devices with ultimate conversion efficiencies >40%. Reviewed photovoltaic studies include multijunction Si/CdZnTe devices with conversion efficiency of ~17%, analysis of structural and optoelectrical quality of undoped CdTe epilayer films on Si, and the effect that a Te-rich growth environment has on the structural and optoelectronic quality of both undoped and As-doped heteroepitaxial CdTe.

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1422878
Report Number(s):
NREL/JA-5K00-70988
Journal ID: ISSN 2059-8521; applab
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
MRS Advances
Additional Journal Information:
Journal Volume: 1; Journal Issue: 50; Journal ID: ISSN 2059-8521
Publisher:
Materials Research Society (MRS)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; epitaxy; photovoltaics; alloy materials

Citation Formats

Gessert, T. A., Colegrove, E., Stafford, B., Kodama, R., Gao, Wei, Moutinho, H. R., Kuciauskas, D., Reedy, R. C., Barnes, T. M., and Sivananthan, S. II-VI Material Integration With Silicon for Detector and PV Applications. United States: N. p., 2016. Web. doi:10.1557/adv.2016.408.
Gessert, T. A., Colegrove, E., Stafford, B., Kodama, R., Gao, Wei, Moutinho, H. R., Kuciauskas, D., Reedy, R. C., Barnes, T. M., & Sivananthan, S. II-VI Material Integration With Silicon for Detector and PV Applications. United States. doi:10.1557/adv.2016.408.
Gessert, T. A., Colegrove, E., Stafford, B., Kodama, R., Gao, Wei, Moutinho, H. R., Kuciauskas, D., Reedy, R. C., Barnes, T. M., and Sivananthan, S. Fri . "II-VI Material Integration With Silicon for Detector and PV Applications". United States. doi:10.1557/adv.2016.408.
@article{osti_1422878,
title = {II-VI Material Integration With Silicon for Detector and PV Applications},
author = {Gessert, T. A. and Colegrove, E. and Stafford, B. and Kodama, R. and Gao, Wei and Moutinho, H. R. and Kuciauskas, D. and Reedy, R. C. and Barnes, T. M. and Sivananthan, S.},
abstractNote = {Heteroepitaxial growth of high-quality II-VI-alloy materials on Si substrates is a well-established commercial growth process for infrared (IR) detector devices. However, it has only recently been recognized that these same processes may have important applications for production of high-efficiency photovoltaic devices. This submission reviews the process developments that have enabled effective heteroepitaxy of II-VI alloy materials on lattice-mismatched Si for IR detectors as a foundation to describe recent efforts to apply these insights to the fabrication of multijunction Si/CdZnTe devices with ultimate conversion efficiencies >40%. Reviewed photovoltaic studies include multijunction Si/CdZnTe devices with conversion efficiency of ~17%, analysis of structural and optoelectrical quality of undoped CdTe epilayer films on Si, and the effect that a Te-rich growth environment has on the structural and optoelectronic quality of both undoped and As-doped heteroepitaxial CdTe.},
doi = {10.1557/adv.2016.408},
journal = {MRS Advances},
issn = {2059-8521},
number = 50,
volume = 1,
place = {United States},
year = {2016},
month = {1}
}

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