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Title: Metallic nanomesh

Abstract

A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300.OMEGA./.quadrature. when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.

Inventors:
; ;
Publication Date:
Research Org.:
University of Houston System, Houston, TX (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1422748
Patent Number(s):
9,899,117
Application Number:
14/298,090
Assignee:
UNIVERSITY OF HOUSTON SYSTEM (Houston, TX) CHO
DOE Contract Number:
FG02-13ER46917
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jun 06
Country of Publication:
United States
Language:
English

Citation Formats

Ren, Zhifeng, Sun, Tianyi, and Guo, Chuanfei. Metallic nanomesh. United States: N. p., 2018. Web.
Ren, Zhifeng, Sun, Tianyi, & Guo, Chuanfei. Metallic nanomesh. United States.
Ren, Zhifeng, Sun, Tianyi, and Guo, Chuanfei. Tue . "Metallic nanomesh". United States. doi:. https://www.osti.gov/servlets/purl/1422748.
@article{osti_1422748,
title = {Metallic nanomesh},
author = {Ren, Zhifeng and Sun, Tianyi and Guo, Chuanfei},
abstractNote = {A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300.OMEGA./.quadrature. when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 20 00:00:00 EST 2018},
month = {Tue Feb 20 00:00:00 EST 2018}
}

Patent:

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