skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Tunnel barrier schottky

Abstract

A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

Inventors:
; ; ;
Publication Date:
Research Org.:
HRL Laboratories, LLC, Malibu, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1422743
Patent Number(s):
9,899,482
Application Number:
15/093,710
Assignee:
HRL Laboratories, LLC (Malibu, CA) ARPA-E
DOE Contract Number:
AR0000450
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Apr 07
Country of Publication:
United States
Language:
English

Citation Formats

Chu, Rongming, Cao, Yu, Li, Zijian, and Williams, Adam J. Tunnel barrier schottky. United States: N. p., 2018. Web.
Chu, Rongming, Cao, Yu, Li, Zijian, & Williams, Adam J. Tunnel barrier schottky. United States.
Chu, Rongming, Cao, Yu, Li, Zijian, and Williams, Adam J. Tue . "Tunnel barrier schottky". United States. doi:. https://www.osti.gov/servlets/purl/1422743.
@article{osti_1422743,
title = {Tunnel barrier schottky},
author = {Chu, Rongming and Cao, Yu and Li, Zijian and Williams, Adam J.},
abstractNote = {A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 20 00:00:00 EST 2018},
month = {Tue Feb 20 00:00:00 EST 2018}
}

Patent:

Save / Share: