Tunnel barrier schottky
Patent
·
OSTI ID:1422743
A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.
- Research Organization:
- HRL Laboratories, LLC, Malibu, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AR0000450
- Assignee:
- HRL Laboratories, LLC (Malibu, CA)
- Patent Number(s):
- 9,899,482
- Application Number:
- 15/093,710
- OSTI ID:
- 1422743
- Country of Publication:
- United States
- Language:
- English
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