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Title: Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

Journal Article · · Applied Surface Science

Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI ID:
1422680
Journal Information:
Applied Surface Science, Journal Name: Applied Surface Science Vol. 355 Journal Issue: C; ISSN 0169-4332
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

References (23)

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Direct Measurements of Self-Sputtering, Swelling, and Deposition Effects of N-Type Low-Energy Ion Implantations journal September 2009
Anomalous behavior of shallow BF3 plasma immersion ion implantation journal March 1994
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Effects of Plasma Irradiation in Arsenic Plasma Doping Using Overhang Test Structures journal February 2013
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Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon journal November 2008
Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study: Surface evolution of very high dose arsenic implants in silicon formed by plasma immersion ion implantation - a long term study journal December 2013
Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon journal December 2012
Formation of arsenic rich silicon oxide under plasma immersion ion implantation and laser annealing
  • Meirer, F.; Demenev, E.; Giubertoni, D.
  • ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology, AIP Conference Proceedings https://doi.org/10.1063/1.4766520
conference January 2012
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