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Title: Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn 1 - x In x Te for x 0.10

Abstract

In this paper, the temperature dependence of the London penetration depth Δλ(T) in the superconducting doped topological crystalline insulator Sn 1-xIn xTe was measured down to 450 mK for two different doping levels, x ≈ 0.45 (optimally doped) and x ≈ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. Finally, the introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance T c, indicating that ferroelectric interactions do not compete with superconductivity.

Authors:
 [1];  [2];  [2];  [3];  [3];  [4];  [5];  [6];  [7];  [8];  [8];  [8];  [9];  [2];  [2]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Notre Dame, IN (United States). Dept. of Physics
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Univ. of Notre Dame, IN (United States). Dept. of Physics
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  5. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Stony Brook Univ., NY (United States). Materials Science and Engineering Dept.
  6. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Stony Brook Univ., NY (United States). Dept. of Physics and Astronomy
  7. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
  8. Western Michigan Univ., Kalamazoo, MI (United States). Dept. of Physics
  9. Inst. Laue-Langevin, Grenoble (France)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Notre Dame, IN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Brookhaven National Lab. (BNL), Upton, NY (United States); Energy Frontier Research Centers (EFRC) (United States). Center for Emergent Superconductivity (CES)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1422598
Grant/Contract Number:  
AC05-00OR22725; SC0005051
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 2; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; penetration depth; superconducting gap; superconductivity; topological superconductors; topological materials; condensed matter & materials physics

Citation Formats

Smylie, M. P., Claus, H., Kwok, W. -K., Louden, E. R., Eskildsen, M. R., Sefat, A. S., Zhong, R. D., Schneeloch, J., Gu, G. D., Bokari, E., Niraula, P. M., Kayani, A., Dewhurst, C. D., Snezhko, A., and Welp, U. Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn1-xInxTe for x≥0.10. United States: N. p., 2018. Web. doi:10.1103/physrevb.97.024511.
Smylie, M. P., Claus, H., Kwok, W. -K., Louden, E. R., Eskildsen, M. R., Sefat, A. S., Zhong, R. D., Schneeloch, J., Gu, G. D., Bokari, E., Niraula, P. M., Kayani, A., Dewhurst, C. D., Snezhko, A., & Welp, U. Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn1-xInxTe for x≥0.10. United States. doi:10.1103/physrevb.97.024511.
Smylie, M. P., Claus, H., Kwok, W. -K., Louden, E. R., Eskildsen, M. R., Sefat, A. S., Zhong, R. D., Schneeloch, J., Gu, G. D., Bokari, E., Niraula, P. M., Kayani, A., Dewhurst, C. D., Snezhko, A., and Welp, U. Fri . "Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn1-xInxTe for x≥0.10". United States. doi:10.1103/physrevb.97.024511.
@article{osti_1422598,
title = {Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn1-xInxTe for x≥0.10},
author = {Smylie, M. P. and Claus, H. and Kwok, W. -K. and Louden, E. R. and Eskildsen, M. R. and Sefat, A. S. and Zhong, R. D. and Schneeloch, J. and Gu, G. D. and Bokari, E. and Niraula, P. M. and Kayani, A. and Dewhurst, C. D. and Snezhko, A. and Welp, U.},
abstractNote = {In this paper, the temperature dependence of the London penetration depth Δλ(T) in the superconducting doped topological crystalline insulator Sn1-xInxTe was measured down to 450 mK for two different doping levels, x ≈ 0.45 (optimally doped) and x ≈ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. Finally, the introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance Tc, indicating that ferroelectric interactions do not compete with superconductivity.},
doi = {10.1103/physrevb.97.024511},
journal = {Physical Review B},
number = 2,
volume = 97,
place = {United States},
year = {Fri Jan 19 00:00:00 EST 2018},
month = {Fri Jan 19 00:00:00 EST 2018}
}

Journal Article:
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