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Title: Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films

Abstract

Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200°C due to the low Curie temperature of the piezoelectric material. High temperature piezoelectric materials such as La2Ti2O7 (LTO) would facilitate the development of high-temperature sensors if the piezoelectric coupling coefficient could be maximized. We have deposited epitaxial LTO films on SrTiO3(001), SrTiO3(110), and rutile TiO2(110) substrates by pulsed laser deposition, and show that the crystalline orientation of the LTO film, and thus its piezoelectric coupling direction, can be controlled by epitaxial matching to the substrate. The structure and phase purity of the films were investigated by x-ray diffraction and scanning transmission electron microscopy. To characterize the piezoelectric properties, piezoresponse force microscopy was used to measure the in-plane and out-of-plane piezoelectric coupling in the films. We find that the strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric crystalline direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO2(110) results in epitaxial La2/3TiO3, an orthorhombic perovskite of interest as a microwave dielectric material. La2/3TiO3 can be difficult to stabilize in bulk form, and epitaxial deposition has not been previously reported. These results confirm that control of themore » crystalline orientation of LTO-based materials can increase the out-of-plane strength of its piezoelectric coupling, which can be exploited in piezoelectric devices.« less

Authors:
ORCiD logo; ORCiD logo; ; ORCiD logo; ; ; ORCiD logo; ; ; ORCiD logo
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States); Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Biological and Environmental Research (BER) (SC-23); USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1422279
Report Number(s):
PNNL-SA-128769
Journal ID: ISSN 2045-2322; 49131
DOE Contract Number:  
AC02-06CH11357; AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
Environmental Molecular Sciences Laboratory

Citation Formats

Kaspar, Tiffany C., Hong, Seungbum, Bowden, Mark E., Varga, Tamas, Yan, Pengfei, Wang, Chongmin, Spurgeon, Steven R., Comes, Ryan B., Ramuhalli, Pradeep, and Henager, Charles H. Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films. United States: N. p., 2018. Web. doi:10.1038/s41598-018-21009-5.
Kaspar, Tiffany C., Hong, Seungbum, Bowden, Mark E., Varga, Tamas, Yan, Pengfei, Wang, Chongmin, Spurgeon, Steven R., Comes, Ryan B., Ramuhalli, Pradeep, & Henager, Charles H. Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films. United States. doi:10.1038/s41598-018-21009-5.
Kaspar, Tiffany C., Hong, Seungbum, Bowden, Mark E., Varga, Tamas, Yan, Pengfei, Wang, Chongmin, Spurgeon, Steven R., Comes, Ryan B., Ramuhalli, Pradeep, and Henager, Charles H. Wed . "Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films". United States. doi:10.1038/s41598-018-21009-5.
@article{osti_1422279,
title = {Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films},
author = {Kaspar, Tiffany C. and Hong, Seungbum and Bowden, Mark E. and Varga, Tamas and Yan, Pengfei and Wang, Chongmin and Spurgeon, Steven R. and Comes, Ryan B. and Ramuhalli, Pradeep and Henager, Charles H.},
abstractNote = {Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200°C due to the low Curie temperature of the piezoelectric material. High temperature piezoelectric materials such as La2Ti2O7 (LTO) would facilitate the development of high-temperature sensors if the piezoelectric coupling coefficient could be maximized. We have deposited epitaxial LTO films on SrTiO3(001), SrTiO3(110), and rutile TiO2(110) substrates by pulsed laser deposition, and show that the crystalline orientation of the LTO film, and thus its piezoelectric coupling direction, can be controlled by epitaxial matching to the substrate. The structure and phase purity of the films were investigated by x-ray diffraction and scanning transmission electron microscopy. To characterize the piezoelectric properties, piezoresponse force microscopy was used to measure the in-plane and out-of-plane piezoelectric coupling in the films. We find that the strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric crystalline direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO2(110) results in epitaxial La2/3TiO3, an orthorhombic perovskite of interest as a microwave dielectric material. La2/3TiO3 can be difficult to stabilize in bulk form, and epitaxial deposition has not been previously reported. These results confirm that control of the crystalline orientation of LTO-based materials can increase the out-of-plane strength of its piezoelectric coupling, which can be exploited in piezoelectric devices.},
doi = {10.1038/s41598-018-21009-5},
journal = {Scientific Reports},
issn = {2045-2322},
number = 1,
volume = 8,
place = {United States},
year = {2018},
month = {2}
}

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