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Title: Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3];  [3]; ORCiD logo [2]; ORCiD logo [4];  [4];  [1]
  1. Department of Solid-State Sciences, Ghent University, 9000 Gent, Belgium
  2. Instituut voor Kern-en Stralingsfysica, KU Leuven, B-3001 Leuven, Belgium
  3. EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
  4. IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1422009
Grant/Contract Number:  
AC02-98CH10886
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 123 Journal Issue: 7; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Geenen, F. A., van Stiphout, K., Nanakoudis, A., Bals, S., Vantomme, A., Jordan-Sweet, J., Lavoie, C., and Detavernier, C. Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration. United States: N. p., 2018. Web. doi:10.1063/1.5009641.
Geenen, F. A., van Stiphout, K., Nanakoudis, A., Bals, S., Vantomme, A., Jordan-Sweet, J., Lavoie, C., & Detavernier, C. Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration. United States. doi:10.1063/1.5009641.
Geenen, F. A., van Stiphout, K., Nanakoudis, A., Bals, S., Vantomme, A., Jordan-Sweet, J., Lavoie, C., and Detavernier, C. Wed . "Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration". United States. doi:10.1063/1.5009641.
@article{osti_1422009,
title = {Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration},
author = {Geenen, F. A. and van Stiphout, K. and Nanakoudis, A. and Bals, S. and Vantomme, A. and Jordan-Sweet, J. and Lavoie, C. and Detavernier, C.},
abstractNote = {},
doi = {10.1063/1.5009641},
journal = {Journal of Applied Physics},
number = 7,
volume = 123,
place = {United States},
year = {Wed Feb 21 00:00:00 EST 2018},
month = {Wed Feb 21 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on February 21, 2019
Publisher's Accepted Manuscript

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Works referenced in this record:

Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K
journal, July 1984

  • Okada, Yasumasa; Tokumaru, Yozo
  • Journal of Applied Physics, Vol. 56, Issue 2, p. 314-320
  • DOI: 10.1063/1.333965