Elevated Temperature Photophysical Properties and Morphological Stability of CdSe and CdSe/CdS Nanoplatelets

doi:10.1021/acs.jpclett.7b02793

Title: Elevated Temperature Photophysical Properties and Morphological Stability of CdSe and CdSe/CdS Nanoplatelets

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Abstract

Elevated temperature optoelectronic performance of semiconductor nanomaterials remains an important issue for applications. Here we examine two-dimensional CdSe nanoplatelets (NPs) and CdS/CdSe/CdS shell/core/shell sandwich NPs at temperatures ranging from 300-700 K using static and transient spectroscopies as well as in-situ transmission electron microscopy. NPs exhibit reversible changes in PL intensity, spectral position, and emission linewidth with temperature elevation up to ~500 K, losing a factor of ~8 to 10 in PL intensity at 400 K relative to ambient. Temperature elevation above ~500 K yields thickness dependent, irreversible degradation in optical properties. Electron microscopy relates stability of the NP morphology up to near 600 K followed by sintering and evaporation at still higher temperatures. The mechanism of reversible PL loss, based on differences in decay dynamics between time-resolved photoluminescence and transient absorption, arise primarily from hole trapping in both NPs and sandwich NPs.

Authors:

Rowland, Clare E. ^[1]; Fedin, Igor ^[2];

^[3]; Liu, Yuzi ^[3];

^[4];

^[1]

Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States; Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States
Department of Chemistry and James Frank Institute, University of Chicago, Chicago, Illinois 60637, United States
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States; Department of Chemistry and James Frank Institute, University of Chicago, Chicago, Illinois 60637, United States

Publication Date:: 2018-01-03

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

OSTI Identifier:: 1421967

DOE Contract Number:: AC02-06CH11357

Resource Type:: Journal Article

Journal Name:: Journal of Physical Chemistry Letters

Additional Journal Information:: Journal Volume: 9; Journal Issue: 2; Journal ID: ISSN 1948-7185

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Rowland, Clare E., Fedin, Igor, Diroll, Benjamin T., Liu, Yuzi, Talapin, Dmitri V., and Schaller, Richard D. Elevated Temperature Photophysical Properties and Morphological Stability of CdSe and CdSe/CdS Nanoplatelets.  United States: N. p., 2018. 
        Web.  doi:10.1021/acs.jpclett.7b02793.

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                    Rowland, Clare E., Fedin, Igor, Diroll, Benjamin T., Liu, Yuzi, Talapin, Dmitri V., & Schaller, Richard D. Elevated Temperature Photophysical Properties and Morphological Stability of CdSe and CdSe/CdS Nanoplatelets.  United States.  doi:10.1021/acs.jpclett.7b02793.

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                    Rowland, Clare E., Fedin, Igor, Diroll, Benjamin T., Liu, Yuzi, Talapin, Dmitri V., and Schaller, Richard D. Wed .  
        "Elevated Temperature Photophysical Properties and Morphological Stability of CdSe and CdSe/CdS Nanoplatelets".  United States.  doi:10.1021/acs.jpclett.7b02793.

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@article{osti_1421967,

  title        = {Elevated Temperature Photophysical Properties and Morphological Stability of CdSe and CdSe/CdS Nanoplatelets},

  author       = {Rowland, Clare E. and Fedin, Igor and Diroll, Benjamin T. and Liu, Yuzi and Talapin, Dmitri V. and Schaller, Richard D.},

  abstractNote = {Elevated temperature optoelectronic performance of semiconductor nanomaterials remains an important issue for applications. Here we examine two-dimensional CdSe nanoplatelets (NPs) and CdS/CdSe/CdS shell/core/shell sandwich NPs at temperatures ranging from 300-700 K using static and transient spectroscopies as well as in-situ transmission electron microscopy. NPs exhibit reversible changes in PL intensity, spectral position, and emission linewidth with temperature elevation up to ~500 K, losing a factor of ~8 to 10 in PL intensity at 400 K relative to ambient. Temperature elevation above ~500 K yields thickness dependent, irreversible degradation in optical properties. Electron microscopy relates stability of the NP morphology up to near 600 K followed by sintering and evaporation at still higher temperatures. The mechanism of reversible PL loss, based on differences in decay dynamics between time-resolved photoluminescence and transient absorption, arise primarily from hole trapping in both NPs and sandwich NPs.},

  doi          = {10.1021/acs.jpclett.7b02793},

  journal      = {Journal of Physical Chemistry Letters},

  issn         = {1948-7185},

  number       = 2,

  volume       = 9,

  place        = {United States},

  year         = {2018},

  month        = {1}

}

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DOI: 10.1021/acs.jpclett.7b02793

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