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Title: Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1421890
Grant/Contract Number:
NA0001982
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 7; Related Information: CHORUS Timestamp: 2018-02-20 11:41:51; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Kou, Liangzhi, Fu, Huixia, Ma, Yandong, Yan, Binghai, Liao, Ting, Du, Aijun, and Chen, Changfeng. Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.075429.
Kou, Liangzhi, Fu, Huixia, Ma, Yandong, Yan, Binghai, Liao, Ting, Du, Aijun, & Chen, Changfeng. Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers. United States. doi:10.1103/PhysRevB.97.075429.
Kou, Liangzhi, Fu, Huixia, Ma, Yandong, Yan, Binghai, Liao, Ting, Du, Aijun, and Chen, Changfeng. Tue . "Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers". United States. doi:10.1103/PhysRevB.97.075429.
@article{osti_1421890,
title = {Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers},
author = {Kou, Liangzhi and Fu, Huixia and Ma, Yandong and Yan, Binghai and Liao, Ting and Du, Aijun and Chen, Changfeng},
abstractNote = {},
doi = {10.1103/PhysRevB.97.075429},
journal = {Physical Review B},
number = 7,
volume = 97,
place = {United States},
year = {Tue Feb 20 00:00:00 EST 2018},
month = {Tue Feb 20 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on February 20, 2019
Publisher's Accepted Manuscript

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