Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)
- Authors:
-
- Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520
- California NanoSystems Institute and Department of Electrical Engineering, University of California, Los Angeles, California 90095
- Department of Physics and Micron School of Materials Science and Engineering, Boise State University, Boise, Idaho 83725
- Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1364083
- Alternate Identifier(s):
- OSTI ID: 1421265
- Grant/Contract Number:
- AC05-06OR23100; Science Graduate Fellowship Program DE-AC05-06OR23100
- Resource Type:
- Journal Article: Published Article
- Journal Name:
- Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
- Additional Journal Information:
- Journal Name: Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics Journal Volume: 35 Journal Issue: 1; Journal ID: ISSN 2166-2746
- Publisher:
- American Vacuum Society/AIP
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Yerino, Christopher D., Liang, Baolai, Huffaker, Diana L., Simmonds, Paul J., and Lee, Minjoo Larry. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110). United States: N. p., 2016.
Web. doi:10.1116/1.4972049.
Yerino, Christopher D., Liang, Baolai, Huffaker, Diana L., Simmonds, Paul J., & Lee, Minjoo Larry. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110). United States. https://doi.org/10.1116/1.4972049
Yerino, Christopher D., Liang, Baolai, Huffaker, Diana L., Simmonds, Paul J., and Lee, Minjoo Larry. 2016.
"Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)". United States. https://doi.org/10.1116/1.4972049.
@article{osti_1364083,
title = {Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)},
author = {Yerino, Christopher D. and Liang, Baolai and Huffaker, Diana L. and Simmonds, Paul J. and Lee, Minjoo Larry},
abstractNote = {},
doi = {10.1116/1.4972049},
url = {https://www.osti.gov/biblio/1364083},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
issn = {2166-2746},
number = 1,
volume = 35,
place = {United States},
year = {Wed Dec 21 00:00:00 EST 2016},
month = {Wed Dec 21 00:00:00 EST 2016}
}
Free Publicly Available Full Text
Publisher's Version of Record at https://doi.org/10.1116/1.4972049
Other availability
Cited by: 34 works
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