Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

Tilka, J. A.; Park, J.; Ahn, Y.; Pateras, A.; Sampson, K. C.; Savage, D. E.; Prance, J. R.; Simmons, C. B.; Coppersmith, S. N.; Eriksson, M. A.; Lagally, M. G.; Holt, M. V.; Evans, P. G.

doi:10.1063/1.4955043

Title: Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

Journal Article · Wed Jul 06 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4955043· OSTI ID:1340989

Tilka, J. A. ^[1]; Park, J. ^[1]; Ahn, Y. ^[1];

^[1]; Sampson, K. C. ^[1]; Savage, D. E. ^[1];

^[1]; Simmons, C. B. ^[1]; Coppersmith, S. N. ^[1]; Eriksson, M. A. ^[1]; Lagally, M. G. ^[1]; Holt, M. V. ^[2];

^[1]

Univ. of Wisconsin, Madison, WI (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)

The highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent xray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patterns of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357; FG02-04ER46147; FG02-03ER46028

OSTI ID:: 1340989

Alternate ID(s):: OSTI ID: 1356344; OSTI ID: 1421259

Journal Information:: Journal of Applied Physics, Vol. 120, Issue 1; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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References (37)

Ordering of nanostressors on free-standing silicon nanomembranes and nanoribbons Ritz, C. S.; Kim-Lee, H-J; Detert, D. M. New Journal of Physics, Vol. 12, Issue 10 https://doi.org/10.1088/1367-2630/12/10/103011	journal	October 2010
Bragg x-ray ptychography of a silicon crystal: Visualization of the dislocation strain field and the production of a vortex beam Takahashi, Yukio; Suzuki, Akihiro; Furutaku, Shin Physical Review B, Vol. 87, Issue 12 https://doi.org/10.1103/PhysRevB.87.121201	journal	March 2013
Strain and lattice orientation distribution in SiN/Ge complementary metal–oxide–semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy Chahine, G. A.; Zoellner, M. H.; Richard, M. -I. Applied Physics Letters, Vol. 106, Issue 7 https://doi.org/10.1063/1.4909529	journal	February 2015
Magnetic field dependence of valley splitting in realistic Si∕SiGe quantum wells Friesen, Mark; Eriksson, M. A.; Coppersmith, S. N. Applied Physics Letters, Vol. 89, Issue 20 https://doi.org/10.1063/1.2387975	journal	November 2006
Influence of misfit dislocations on the surface morphology of Si _{1− x} Ge _x films Lutz, M. A.; Feenstra, R. M.; LeGoues, F. K. Applied Physics Letters, Vol. 66, Issue 6 https://doi.org/10.1063/1.114112	journal	February 1995
SiGe Technology: Heteroepitaxy and High-Speed Microelectronics Mooney, P. M.; Chu, J. O. Annual Review of Materials Science, Vol. 30, Issue 1 https://doi.org/10.1146/annurev.matsci.30.1.335	journal	August 2000
Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures Evans, P. G.; Savage, D. E.; Prance, J. R. Advanced Materials, Vol. 24, Issue 38 https://doi.org/10.1002/adma.201201833	journal	July 2012
Observation of polar vortices in oxide superlattices Yadav, A. K.; Nelson, C. T.; Hsu, S. L. Nature, Vol. 530, Issue 7589 https://doi.org/10.1038/nature16463	journal	January 2016
Modeling of kinematic diffraction from a thin silicon film illuminated by a coherent, focused X-ray nanobeam Ying, Andrew; Osting, Braxton; Noyan, I. C. Journal of Applied Crystallography, Vol. 43, Issue 3 https://doi.org/10.1107/S0021889810008459	journal	April 2010
Strain Imaging of Nanoscale Semiconductor Heterostructures with X-Ray Bragg Projection Ptychography Holt, Martin V.; Hruszkewycz, Stephan O.; Murray, Conal E. Physical Review Letters, Vol. 112, Issue 16 https://doi.org/10.1103/PhysRevLett.112.165502	journal	April 2014
Efficient modeling of Bragg coherent x-ray nanobeam diffraction Hruszkewycz, S. O.; Holt, M. V.; Allain, M. Optics Letters, Vol. 40, Issue 14 https://doi.org/10.1364/OL.40.003241	journal	January 2015
Symmetry in Strain Engineering of Nanomembranes: Making New Strained Materials Paskiewicz, Deborah M.; Scott, Shelley A.; Savage, Donald E. ACS Nano, Vol. 5, Issue 7 https://doi.org/10.1021/nn2009672	journal	June 2011
Direct evidence of strain transfer for InAs island growth on compliant Si substrates Marçal, L. A. B.; Richard, M. -I.; Magalhães-Paniago, R. Applied Physics Letters, Vol. 106, Issue 15 https://doi.org/10.1063/1.4918615	journal	April 2015
Imaging Structure and Composition Homogeneity of 300 mm SiGe Virtual Substrates for Advanced CMOS Applications by Scanning X-ray Diffraction Microscopy Zoellner, Marvin H.; Richard, Marie-Ingrid; Chahine, Gilbert A. ACS Applied Materials & Interfaces, Vol. 7, Issue 17 https://doi.org/10.1021/am508968b	journal	April 2015
Quantitative Nanoscale Imaging of Lattice Distortions in Epitaxial Semiconductor Heterostructures Using Nanofocused X-ray Bragg Projection Ptychography Hruszkewycz, S. O.; Holt, M. V.; Murray, C. E. Nano Letters, Vol. 12, Issue 10 https://doi.org/10.1021/nl303201w	journal	September 2012
Structural refinement of superlattices from x-ray diffraction Fullerton, Eric E.; Schuller, Ivan K.; Vanderstraeten, H. Physical Review B, Vol. 45, Issue 16 https://doi.org/10.1103/PhysRevB.45.9292	journal	April 1992
Electrostatic Coupling and Local Structural Distortions at Interfaces in Ferroelectric/Paraelectric Superlattices Zubko, P.; Jecklin, N.; Torres-Pardo, A. Nano Letters, Vol. 12, Issue 6 https://doi.org/10.1021/nl3003717	journal	May 2012
Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction Richard, Marie-Ingrid; Zoellner, Marvin H.; Chahine, Gilbert A. ACS Applied Materials & Interfaces, Vol. 7, Issue 48 https://doi.org/10.1021/acsami.5b08645	journal	November 2015
Diffractive imaging of highly focused X-ray fields Quiney, H. M.; Peele, A. G.; Cai, Z. Nature Physics, Vol. 2, Issue 2 https://doi.org/10.1038/nphys218	journal	January 2006
Three-dimensional mapping of a deformation field inside a nanocrystal Pfeifer, Mark A.; Williams, Garth J.; Vartanyants, Ivan A. Nature, Vol. 442, Issue 7098 https://doi.org/10.1038/nature04867	journal	July 2006
Structural Consequences of Ferroelectric Nanolithography Jo, Ji Young; Chen, Pice; Sichel, Rebecca J. Nano Letters, Vol. 11, Issue 8 https://doi.org/10.1021/nl2009873	journal	August 2011
Observation of Columnar Microstructure in Step-Graded ${Si}_{1 - x} {Ge}_{x} / Si$ Films Using High-Resolution X-Ray Microdiffraction Eastman, D. E.; Stagarescu, C. B.; Xu, G. Physical Review Letters, Vol. 88, Issue 15 https://doi.org/10.1103/PhysRevLett.88.156101	journal	March 2002
Imaging of strain and lattice orientation by quick scanning X-ray microscopy combined with three-dimensional reciprocal space mapping Chahine, Gilbert André; Richard, Marie-Ingrid; Homs-Regojo, Roberto Arturo Journal of Applied Crystallography, Vol. 47, Issue 2 https://doi.org/10.1107/S1600576714004506	journal	March 2014
The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs Watling, J. R.; Yang, L.; Boriçi, M. Solid-State Electronics, Vol. 48, Issue 8 https://doi.org/10.1016/j.sse.2004.01.015	journal	August 2004
Germanium hut nanostressors on freestanding thin silicon membranes Evans, P. G.; Tinberg, D. S.; Roberts, M. M. Applied Physics Letters, Vol. 87, Issue 7 https://doi.org/10.1063/1.2031941	journal	August 2005
Coherent x-ray wavefront reconstruction of a partially illuminated Fresnel zone plate Mastropietro, F.; Carbone, D.; Diaz, A. Optics Express, Vol. 19, Issue 20 https://doi.org/10.1364/OE.19.019223	journal	January 2011
Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction Mondiali, Valeria; Bollani, Monica; Cecchi, Stefano Applied Physics Letters, Vol. 104, Issue 2 https://doi.org/10.1063/1.4862688	journal	January 2014
Controllable valley splitting in silicon quantum devices Goswami, Srijit; Slinker, K. A.; Friesen, Mark Nature Physics, Vol. 3, Issue 1 https://doi.org/10.1038/nphys475	journal	December 2006
Embracing the quantum limit in silicon computing Morton, John J. L.; McCamey, Dane R.; Eriksson, Mark A. Nature, Vol. 479, Issue 7373 https://doi.org/10.1038/nature10681	journal	November 2011
Scanning x-ray microtopographs of misfit dislocations at SiGe/Si interfaces Mooney, P. M.; Jordan-Sweet, J. L.; Christiansen, S. H. Applied Physics Letters, Vol. 79, Issue 15 https://doi.org/10.1063/1.1408601	journal	October 2001
Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure Pateras, A. I.; Allain, M.; Godard, P. Physical Review B, Vol. 92, Issue 20 https://doi.org/10.1103/PhysRevB.92.205305	journal	November 2015
Electrode-stress-induced nanoscale disorder in Si quantum electronic devices Park, J.; Ahn, Y.; Tilka, J. A. APL Materials, Vol. 4, Issue 6 https://doi.org/10.1063/1.4954054	journal	June 2016
Silicon quantum electronics Zwanenburg, Floris A.; Dzurak, Andrew S.; Morello, Andrea Reviews of Modern Physics, Vol. 85, Issue 3 https://doi.org/10.1103/RevModPhys.85.961	journal	July 2013
Framework for three-dimensional coherent diffraction imaging by focused beam x-ray Bragg ptychography Hruszkewycz, Stephan O.; Holt, Martin V.; Tripathi, Ash Optics Letters, Vol. 36, Issue 12 https://doi.org/10.1364/OL.36.002227	journal	January 2011
Microfabricated strained substrates for Ge epitaxial growth Evans, P. G.; Rugheimer, P. P.; Lagally, M. G. Journal of Applied Physics, Vol. 97, Issue 10 https://doi.org/10.1063/1.1894579	journal	May 2005
Formation of strain-induced quantum dots in gated semiconductor nanostructures Thorbeck, Ted; Zimmerman, Neil M. AIP Advances, Vol. 5, Issue 8 https://doi.org/10.1063/1.4928320	journal	August 2015
Metamorphic materials for quantum computing Deelman, Peter W.; Edge, Lisa F.; Jackson, Clayton A. MRS Bulletin, Vol. 41, Issue 3 https://doi.org/10.1557/mrs.2016.28	journal	March 2016

Cited By (3)

Stressor-layer-induced elastic strain sharing in SrTiO ₃ complex oxide sheets Tilka, J. A.; Park, J.; Ahn, Y. Applied Physics Letters, Vol. 112, Issue 9 https://doi.org/10.1063/1.5019920	journal	February 2018
Electrode-induced lattice distortions in GaAs multi-quantum-dot arrays Pateras, Anastasios; Carnis, Jérôme; Mukhopadhyay, Uditendu Journal of Materials Research, Vol. 34, Issue 08 https://doi.org/10.1557/jmr.2019.61	journal	March 2019
Stressor-Layer-Induced Elastic Strain Sharing in SrTiO3 Complex Oxide Sheets Tilka, J. A.; Park, J.; Ahn, Y. arXiv https://doi.org/10.48550/arxiv.2002.11287	text	January 2020

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Title: Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

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