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Title: Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

Authors:
ORCiD logo [1];  [1]
  1. Radiation-Solid Interactions Department 1111, Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185-1056, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1421249
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 117 Journal Issue: 4; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Wampler, William R., and Myers, Samuel M. Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide. United States: N. p., 2015. Web. doi:10.1063/1.4906104.
Wampler, William R., & Myers, Samuel M. Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide. United States. doi:10.1063/1.4906104.
Wampler, William R., and Myers, Samuel M. Wed . "Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide". United States. doi:10.1063/1.4906104.
@article{osti_1421249,
title = {Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide},
author = {Wampler, William R. and Myers, Samuel M.},
abstractNote = {},
doi = {10.1063/1.4906104},
journal = {Journal of Applied Physics},
number = 4,
volume = 117,
place = {United States},
year = {Wed Jan 28 00:00:00 EST 2015},
month = {Wed Jan 28 00:00:00 EST 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4906104

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

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Works referenced in this record:

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156