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Title: Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al 0.7 Ga 0.3 N

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1421111
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 117 Journal Issue: 18; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Armstrong, Andrew M., Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., and Wierer, Jr., Jonathan J. Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al 0.7 Ga 0.3 N. United States: N. p., 2015. Web. doi:10.1063/1.4920926.
Armstrong, Andrew M., Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., & Wierer, Jr., Jonathan J. Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al 0.7 Ga 0.3 N. United States. doi:10.1063/1.4920926.
Armstrong, Andrew M., Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., and Wierer, Jr., Jonathan J. Thu . "Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al 0.7 Ga 0.3 N". United States. doi:10.1063/1.4920926.
@article{osti_1421111,
title = {Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al 0.7 Ga 0.3 N},
author = {Armstrong, Andrew M. and Moseley, Michael W. and Allerman, Andrew A. and Crawford, Mary H. and Wierer, Jr., Jonathan J.},
abstractNote = {},
doi = {10.1063/1.4920926},
journal = {Journal of Applied Physics},
number = 18,
volume = 117,
place = {United States},
year = {Thu May 14 00:00:00 EDT 2015},
month = {Thu May 14 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4920926

Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

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Works referenced in this record:

Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
journal, May 2005

  • Nam, K. B.; Nakarmi, M. L.; Lin, J. Y.
  • Applied Physics Letters, Vol. 86, Issue 22, Article No. 222108
  • DOI: 10.1063/1.1943489