Growth Temperature Dependence of Si Doping Efficiency and Compensating Deep Level Defect Incorporation in Al0.7Ga0.3N

Armstrong, Andrew; Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan

doi:10.1063/1.4920926

Title: Growth Temperature Dependence of Si Doping Efficiency and Compensating Deep Level Defect Incorporation in Al_0.7Ga_0.3N

Journal Article · Mon May 11 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4920926· OSTI ID:1235270

Armstrong, Andrew ^[1]; Moseley, Michael William ^[1]; Allerman, Andrew A. ^[1]; Crawford, Mary H. ^[1]; Wierer, Jonathan ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al_0.7Ga_0.3N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Furthermore, deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, which includes thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al_0.7Ga_0.3N.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1235270

Alternate ID(s):: OSTI ID: 1421111

Report Number(s):: SAND2015-4124J; 588231

Journal Information:: Journal of Applied Physics, Vol. 117, Issue 18; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 20 works

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References (21)

AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal Hahn, Herwig; Reuters, Ben; Kalisch, Holger Semiconductor Science and Technology, Vol. 28, Issue 7 https://doi.org/10.1088/0268-1242/28/7/074017	journal	June 2013
Ni/Au Schottky diodes on AlxGa1-xN (0.7<x<1) grown on AlN single crystal substrates Xie, Jinqiao; Mia, Seiji; Dalmau, Rafael physica status solidi (c), Vol. 8, Issue 7-8 https://doi.org/10.1002/pssc.201001009	journal	June 2011
Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki physica status solidi (a), Vol. 209, Issue 3 https://doi.org/10.1002/pssa.201100379	journal	February 2012
High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate Tokuda, Hirokuni; Hatano, Maiko; Yafune, Norimasa Applied Physics Express, Vol. 3, Issue 12 https://doi.org/10.1143/APEX.3.121003	journal	December 2010
High carrier concentration in high Al-composition AlGaN-channnel HEMTs Hashimoto, Shin; Akita, Katsushi; Yamamoto, Yoshiyuki physica status solidi (c), Vol. 9, Issue 2 https://doi.org/10.1002/pssc.201100289	journal	November 2011
An assessment of wide bandgap semiconductors for power devices Hudgins, J. L.; Simin, G. S.; Santi, E. IEEE Transactions on Power Electronics, Vol. 18, Issue 3 https://doi.org/10.1109/TPEL.2003.810840	journal	May 2003
New Unipolar Switching Power Device Figures of Merit Huang, A. Q. IEEE Electron Device Letters, Vol. 25, Issue 5 https://doi.org/10.1109/LED.2004.826533	journal	May 2004
Internal photoemission in solar blind AlGaN Schottky barrier photodiodes Duboz, Jean-Yves; Grandjean, Nicolas; Omnes, Franck Applied Physics Letters, Vol. 86, Issue 6 https://doi.org/10.1063/1.1862780	journal	February 2005
Intrinsic limitations to the doping of wide-gap semiconductors Walukiewicz, W. Physica B: Condensed Matter, Vol. 302-303 https://doi.org/10.1016/S0921-4526(01)00417-3	journal	January 2001
Highly conductive n-Al _x Ga ₁₋ _x N layers with aluminum mole fractions above 80% Mehnke, Frank; Wernicke, Tim; Pingel, Harald Applied Physics Letters, Vol. 103, Issue 21 https://doi.org/10.1063/1.4833247	journal	November 2013
Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications Collazo, Ramón; Mita, Seiji; Xie, Jinqiao physica status solidi (c), Vol. 8, Issue 7-8 https://doi.org/10.1002/pssc.201000964	journal	May 2011
The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN Kakanakova-Georgieva, A.; Nilsson, D.; Trinh, X. T. Applied Physics Letters, Vol. 102, Issue 13 https://doi.org/10.1063/1.4800978	journal	April 2013
Deep-level optical spectroscopy in GaAs Chantre, A.; Vincent, G.; Bois, D. Physical Review B, Vol. 23, Issue 10 https://doi.org/10.1103/PhysRevB.23.5335	journal	May 1981
Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors Pässler, Roland Journal of Applied Physics, Vol. 96, Issue 1 https://doi.org/10.1063/1.1753076	journal	July 2004
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon Armstrong, A.; Arehart, A. R.; Green, D. Journal of Applied Physics, Vol. 98, Issue 5 https://doi.org/10.1063/1.2005379	journal	September 2005
Optically and thermally detected deep levels in n -type Schottky and p+-n GaN diodes Hierro, A.; Kwon, D.; Ringel, S. A. Applied Physics Letters, Vol. 76, Issue 21 https://doi.org/10.1063/1.126580	journal	May 2000
Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys Nam, K. B.; Nakarmi, M. L.; Lin, J. Y. Applied Physics Letters, Vol. 86, Issue 22, Article No. 222108 https://doi.org/10.1063/1.1943489	journal	May 2005
Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al _0.6 Ga _0.4 N films grown on AlN templates by metalorganic vapor phase epitaxy Chichibu, S. F.; Miyake, H.; Ishikawa, Y. Journal of Applied Physics, Vol. 113, Issue 21 https://doi.org/10.1063/1.4807906	journal	June 2013
Origins of optical absorption and emission lines in AlN Yan, Qimin; Janotti, Anderson; Scheffler, Matthias Applied Physics Letters, Vol. 105, Issue 11 https://doi.org/10.1063/1.4895786	journal	September 2014
A method to determine deep level profiles in highly compensated, wide band gap semiconductors Armstrong, A.; Arehart, A. R.; Ringel, S. A. Journal of Applied Physics, Vol. 97, Issue 8 https://doi.org/10.1063/1.1862321	journal	April 2005
Theoretical investigation of native defects, impurities, and complexes in aluminum nitride Stampfl, C.; Van de Walle, C. G. Physical Review B, Vol. 65, Issue 15 https://doi.org/10.1103/PhysRevB.65.155212	journal	April 2002

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