Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Bryan, Zachary; Bryan, Isaac; Gaddy, Benjamin E.; Reddy, Pramod; Hussey, Lindsay; Bobea, Milena; Guo, Wei; Hoffmann, Marc; Kirste, Ronny; Tweedie, James; Gerhold, Michael; Irving, Douglas L.; Sitar, Zlatko; Collazo, Ramón

doi:10.1063/1.4903058

Title: Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Journal Article · Mon Dec 01 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903058· OSTI ID:1420705

Bryan, Zachary ^[1]; Bryan, Isaac ^[1]; Gaddy, Benjamin E. ^[1];

^[1]; Hussey, Lindsay ^[1]; Bobea, Milena ^[1];

^[1]; Hoffmann, Marc ^[1]; Kirste, Ronny ^[1]; Tweedie, James ^[1]; Gerhold, Michael ^[2]; Irving, Douglas L. ^[1]; Sitar, Zlatko ^[1]; Collazo, Ramón ^[1]

Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
Engineering Science Directorate, Army Research Office, P.O. Box 12211, Research Triangle Park, North Carolina 27703, USA

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000299

OSTI ID:: 1420705

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 105 Journal Issue: 22; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 43 works

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References (20)

Intentional control of n -type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1) Taniyasu, Yoshitaka; Kasu, Makoto; Kobayashi, Naoki Applied Physics Letters, Vol. 81, Issue 7 https://doi.org/10.1063/1.1499738	journal	August 2002
Fermi Level Control of Point Defects During Growth of Mg-Doped GaN Bryan, Zachary; Hoffmann, Marc; Tweedie, James Journal of Electronic Materials, Vol. 42, Issue 5 https://doi.org/10.1007/s11664-012-2342-9	journal	December 2012
Schottky contact formation on polar and non-polar AlN Reddy, Pramod; Bryan, Isaac; Bryan, Zachary Journal of Applied Physics, Vol. 116, Issue 19 https://doi.org/10.1063/1.4901954	journal	November 2014
Point defect management in GaN by Fermi-level control during growth Hoffmann, Marc P.; Tweedie, James; Kirste, Ronny SPIE OPTO, SPIE Proceedings https://doi.org/10.1117/12.2041018	conference	March 2014
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates Guo, Wei; Bryan, Zachary; Xie, Jinqiao Journal of Applied Physics, Vol. 115, Issue 10 https://doi.org/10.1063/1.4868678	journal	March 2014
Photolysis of group III (Al, Ga, In) trimethyl compounds: Detection of organic photofragments CH3 and C2H6 by picosecond laser mass spectroscopy Beuermann, Th.; Stuke, M. Chemical Physics Letters, Vol. 178, Issue 2-3 https://doi.org/10.1016/0009-2614(91)87056-H	journal	March 1991
Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys Nam, K. B.; Nakarmi, M. L.; Lin, J. Y. Applied Physics Letters, Vol. 86, Issue 22, Article No. 222108 https://doi.org/10.1063/1.1943489	journal	May 2005
Photo-assisted metalorganic vapor phase epitaxial growth of wide-gap II–VI semiconductors Fujita, Shizuo; Fujita, Shigeo Journal of Crystal Growth, Vol. 117, Issue 1-4 https://doi.org/10.1016/0022-0248(92)90718-X	journal	February 1992
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures Xie, Jinqiao; Mita, Seiji; Bryan, Zachary Applied Physics Letters, Vol. 102, Issue 17 https://doi.org/10.1063/1.4803689	journal	April 2013
Effects of deep level defects in semiconductor detectors Lutz, G. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 377, Issue 2-3 https://doi.org/10.1016/0168-9002(96)00025-3	journal	August 1996
Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD Li, Xiangping; Zhang, Baolin; Zhu, Huichao Applied Surface Science, Vol. 254, Issue 7 https://doi.org/10.1016/j.apsusc.2007.08.056	journal	January 2008
The impact of semiconductors on the concepts of electrochemistry Gerischer, H. Electrochimica Acta, Vol. 35, Issue 11-12 https://doi.org/10.1016/0013-4686(90)87067-C	journal	November 1990
The effect of polarity and surface states on the Fermi level at III-nitride surfaces Reddy, Pramod; Bryan, Isaac; Bryan, Zachary Journal of Applied Physics, Vol. 116, Issue 12 https://doi.org/10.1063/1.4896377	journal	September 2014
Laser Conditions in Semiconductors Bernard, Maurice G. A.; Duraffourg, Georges physica status solidi (b), Vol. 1, Issue 7 https://doi.org/10.1002/pssb.19610010703	journal	January 1961
Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence Kumakura, K.; Makimoto, T.; Kobayashi, N. Applied Physics Letters, Vol. 86, Issue 5 https://doi.org/10.1063/1.1861116	journal	January 2005
Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al _0.6 Ga _0.4 N films grown on AlN templates by metalorganic vapor phase epitaxy Chichibu, S. F.; Miyake, H.; Ishikawa, Y. Journal of Applied Physics, Vol. 113, Issue 21 https://doi.org/10.1063/1.4807906	journal	June 2013
Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films Slotte, J.; Tuomisto, F.; Saarinen, K. Applied Physics Letters, Vol. 90, Issue 15 https://doi.org/10.1063/1.2721132	journal	April 2007
Highly conductive n-Al _x Ga ₁₋ _x N layers with aluminum mole fractions above 80% Mehnke, Frank; Wernicke, Tim; Pingel, Harald Applied Physics Letters, Vol. 103, Issue 21 https://doi.org/10.1063/1.4833247	journal	November 2013
A Defect Model for Photoirradiated Semiconductors –Suppression of the Self-Compensation in II-VI Materials– Ichimura, Masaya; Wada, Takao; Fujita, Shizuo Japanese Journal of Applied Physics, Vol. 30, Issue Part 1, No. 12A https://doi.org/10.1143/JJAP.30.3475	journal	December 1991
Light-induced effects on the growth and doping of wide-bandgap II-VI compounds Marfaing, Y. Semiconductor Science and Technology, Vol. 6, Issue 9A https://doi.org/10.1088/0268-1242/6/9A/010	journal	September 1991

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