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Title: Insights to scaling remote plasma sources sustained in NF 3 mixtures

Authors:
 [1];  [2];  [3];  [2];  [2];  [2];  [3];  [1]
  1. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109-2122
  2. Samsung Electronics Co., Ltd., 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-742, South Korea
  3. Department of Physics and Astronomy, University College London, London WC1E 6BT, United Kingdom
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1420694
Grant/Contract Number:
SC0001319; SC0014132
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 35; Journal Issue: 3; Related Information: CHORUS Timestamp: 2018-02-14 18:57:24; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Country of Publication:
United States
Language:
English

Citation Formats

Huang, Shuo, Volynets, Vladimir, Hamilton, James R., Lee, Sangheon, Song, In-Cheol, Lu, Siqing, Tennyson, Jonathan, and Kushner, Mark J. Insights to scaling remote plasma sources sustained in NF 3 mixtures. United States: N. p., 2017. Web. doi:10.1116/1.4978551.
Huang, Shuo, Volynets, Vladimir, Hamilton, James R., Lee, Sangheon, Song, In-Cheol, Lu, Siqing, Tennyson, Jonathan, & Kushner, Mark J. Insights to scaling remote plasma sources sustained in NF 3 mixtures. United States. doi:10.1116/1.4978551.
Huang, Shuo, Volynets, Vladimir, Hamilton, James R., Lee, Sangheon, Song, In-Cheol, Lu, Siqing, Tennyson, Jonathan, and Kushner, Mark J. Mon . "Insights to scaling remote plasma sources sustained in NF 3 mixtures". United States. doi:10.1116/1.4978551.
@article{osti_1420694,
title = {Insights to scaling remote plasma sources sustained in NF 3 mixtures},
author = {Huang, Shuo and Volynets, Vladimir and Hamilton, James R. and Lee, Sangheon and Song, In-Cheol and Lu, Siqing and Tennyson, Jonathan and Kushner, Mark J.},
abstractNote = {},
doi = {10.1116/1.4978551},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 3,
volume = 35,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2017},
month = {Mon May 01 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1116/1.4978551

Citation Metrics:
Cited by: 4works
Citation information provided by
Web of Science

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  • In order to obtain the conditions required to achieve simultaneous luminescence in the working mixtures of excimer lasers, the authors investigate the influence of the composition of Se/Ar/NF/sub 3/ and Xe/He/NF/sub 3/ mixtures on the intensity and kinetics of VUV radiation of molecular Xe*/sub 2/ upon excitation by an electron beam (EB). The magnitude of the EB energy that is consumed in excitation in the mixture of argon and helium particles is greater than or comparable to the magnitude of the ionization loss in xenon.
  • Polycrystalline {beta}-SiC and single-crystalline 4H-SiC surfaces were etched by reactive ion etching (RIE) using NF{sub 3} gas plasma. A smooth surface was obtained on the polycrystalline SiC after RIE at NF{sub 3} gas pressures of 2 and 10 Pa for 10 min, and neither spikes nor pillars were formed on it. On the other hand, some pillars were formed on the single-crystalline SiC surface by RIE at NF{sub 3} gas pressures of 2 and 10 Pa. Though the absence of carbon-rich regions and SiO{sub x} on the outermost surface before etching was confirmed by x-ray photoelectron spectroscopy and Raman analysis,more » x-ray diffraction analysis revealed that graphite crystallites were present in the single-crystalline SiC bulk. It was concluded that the graphite crystallites acted as masks and the pillars grew up from the graphite crystallites in the single crystalline SiC during RIE.« less
  • We report direct gain measurements on the 351-nm XeF(B-italic--X-italic) transition in mixtures of /sup 3/He/Xe/NF/sub 3/, pumped with moderated neutrons produced in a fast-burst reactor. The peak small-signal gain was 0.7%/cm at a deposited power of 5 kW/cc in the gas.
  • Lasing on HF upon optical pumping by emission of an open discharge, using NF{sub 3} and ClF{sub 5} as donors of fluorine atoms, was obtained for the first time in a chemical laser and the bleaching-wave mode was realised in a chemical HF laser. An open surface discharge was used as a pump source. The velocity of the bleaching wave, which was formed under its action, reached {approx}8 km s{sup -1}. The formation of this wave leads to a rapid (with an ultrasonic velocity) replacement of the working medium in the lasing region, which provides a quantum laser efficiency closemore » to unity. The optimum compo-sition of the working mixture was found to be NF{sub 3}:H{sub 2}:Kr =6:10:125 Torr. For this composition, the output laser energy in a 3.2-{mu}s pulse reached {approx}0.4 J and the specific output energy was 3.5 J litre{sup -1}. Approximately the same output characteristics of laser emission (0.35 J in a 3.5-{mu}s pulse in the ClF{sub 5}:H{sub 2}:Kr=3:20:50 Torr mixture) were obtained in the system using ClF{sub 5} as donors of fluorine atoms. (lasers, active media)« less