Correlated high-resolution x-ray diffraction photoluminescence and atom probe tomography analysis of continuous and discontinuous InxGa1-xN quantum wells

Ren, Xiaochen; Riley, James R.; Koleske, Daniel; Lauhon, Lincoln J.

doi:10.1063/1.4926808

Title: Correlated high-resolution x-ray diffraction photoluminescence and atom probe tomography analysis of continuous and discontinuous In_xGa_1-xN quantum wells

Journal Article · Tue Jul 14 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4926808· OSTI ID:1235287

Ren, Xiaochen ^[1]; Riley, James R. ^[1]; Koleske, Daniel ^[2]; Lauhon, Lincoln J. ^[1]

Northwestern Univ., Evanston, IL (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In this study, atom probe tomography (APT) is used to characterize the influence of hydrogen dosing duringGaN barrier growth on the indium distribution of In_xGa_1-xN quantum wells, and correlatedmicro-photoluminescence is used to measure changes in the emission spectrum and efficiency. We found that relative to the control growth, hydrogen dosing leads to a 50% increase in emission intensity arising from discontinuous quantum wells that are narrower, of lower indium content, and with more abrupt interfaces. Additionally, simulations of carrier distributions based on APT composition profiles indicate that the greater carrier confinement leads to an increased radiative recombination rate. Furthermore, APT analysis of quantum well profiles enables refinement of x-ray diffractionanalysis for more accurate nondestructive measurements of composition.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1235287

Alternate ID(s):: OSTI ID: 1420582

Report Number(s):: SAND-2015-5515J; 594846

Journal Information:: Applied Physics Letters, Vol. 107, Issue 02; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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Impact of microscopic In fluctuations on the optical properties of InxGa1-xN blue light-emitting diodes assessed by low-energy X-ray fluorescence mapping using synchrotron radiation Sakaki, Atsushi; Funato, Mitsuru; Miyano, Munehiko Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-39086-5	journal	March 2019
Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography Bonef, Bastien; Catalano, Massimo; Lund, Cory Applied Physics Letters, Vol. 110, Issue 14 https://doi.org/10.1063/1.4979786	journal	April 2017

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Title: Correlated high-resolution x-ray diffraction photoluminescence and atom probe tomography analysis of continuous and discontinuous InxGa1-xN quantum wells

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Title: Correlated high-resolution x-ray diffraction photoluminescence and atom probe tomography analysis of continuous and discontinuous In_xGa_1-xN quantum wells