High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Qi, Meng; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Zhao, Yuning; Protasenko, Vladimir; Song, Bo; Yan, Xiaodong; Li, Guowang; Verma, Jai; Bader, Samuel; Fay, Patrick; Xing, Huili Grace; Jena, Debdeep

doi:10.1063/1.4936891

Title: High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Abstract

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm2 is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm2 is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

Authors:

; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang;

; Protasenko, Vladimir; Song, Bo;

; Li, Guowang; Verma, Jai;

; Fay, Patrick; Xing, Huili Grace; Jena, Debdeep

Publication Date:: Tue Dec 08 00:00:00 EST 2015

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1420571

Resource Type:: Journal Article: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 107 Journal Issue: 23; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Qi, Meng, Nomoto, Kazuki, Zhu, Mingda, Hu, Zongyang, Zhao, Yuning, Protasenko, Vladimir, Song, Bo, Yan, Xiaodong, Li, Guowang, Verma, Jai, Bader, Samuel, Fay, Patrick, Xing, Huili Grace, and Jena, Debdeep. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4936891.

Copy to clipboard


                    Qi, Meng, Nomoto, Kazuki, Zhu, Mingda, Hu, Zongyang, Zhao, Yuning, Protasenko, Vladimir, Song, Bo, Yan, Xiaodong, Li, Guowang, Verma, Jai, Bader, Samuel, Fay, Patrick, Xing, Huili Grace, & Jena, Debdeep. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy.  United States.  https://doi.org/10.1063/1.4936891

Copy to clipboard


                    Qi, Meng, Nomoto, Kazuki, Zhu, Mingda, Hu, Zongyang, Zhao, Yuning, Protasenko, Vladimir, Song, Bo, Yan, Xiaodong, Li, Guowang, Verma, Jai, Bader, Samuel, Fay, Patrick, Xing, Huili Grace, and Jena, Debdeep. 2015.  
        "High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy".  United States.  https://doi.org/10.1063/1.4936891.

Copy to clipboard


                    
@article{osti_1420571,

  title        = {High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy},

  author       = {Qi, Meng and Nomoto, Kazuki and Zhu, Mingda and Hu, Zongyang and Zhao, Yuning and Protasenko, Vladimir and Song, Bo and Yan, Xiaodong and Li, Guowang and Verma, Jai and Bader, Samuel and Fay, Patrick and Xing, Huili Grace and Jena, Debdeep},

  abstractNote = {Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm2 is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm2 is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.},

  doi          = {10.1063/1.4936891},

  url          = {https://www.osti.gov/biblio/1420571},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 23,

  volume       = 107,

  place        = {United States},

  year         = {Tue Dec 08 00:00:00 EST 2015},

  month        = {Tue Dec 08 00:00:00 EST 2015}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record at https://doi.org/10.1063/1.4936891

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 51 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon
journal, April 2015

Zhu, Mingda; Song, Bo; Qi, Meng
IEEE Electron Device Letters, Vol. 36, Issue 4
https://doi.org/10.1109/LED.2015.2404309

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
journal, November 2010

Hurni, Christophe A.; Bierwagen, Oliver; Lang, Jordan R.
Applied Physics Letters, Vol. 97, Issue 22
https://doi.org/10.1063/1.3521388

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
journal, November 2011

Lee, Dong Seup; Gao, Xiang; Guo, Shiping
IEEE Electron Device Letters, Vol. 32, Issue 11
https://doi.org/10.1109/LED.2011.2164613

High Voltage Vertical GaN p-n Diodes With Avalanche Capability
journal, October 2013

Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui
IEEE Transactions on Electron Devices, Vol. 60, Issue 10
https://doi.org/10.1109/TED.2013.2266664

Direct electrical observation of plasma wave - related effects in GaN-based two-dimensional electron gases
journal, October 2014

Zhao, Y.; Chen, W.; Li, W.
Applied Physics Letters, Vol. 105, Issue 17
https://doi.org/10.1063/1.4900964

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
journal, May 2011

Rongming Chu, ; Corrion, A.; Chen, M.
IEEE Electron Device Letters, Vol. 32, Issue 5
https://doi.org/10.1109/LED.2011.2118190

Low-Voltage Tunnel Transistors for Beyond CMOS Logic
journal, December 2010

Seabaugh, Alan C.; Zhang, Qin
Proceedings of the IEEE, Vol. 98, Issue 12
https://doi.org/10.1109/JPROC.2010.2070470

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates
journal, December 2011

Hatakeyama, Yoshitomo; Nomoto, Kazuki; Kaneda, Naoki
IEEE Electron Device Letters, Vol. 32, Issue 12
https://doi.org/10.1109/LED.2011.2167125

Electric breakdown in GaN p‐n junctions
journal, January 1996

Dmitriev, V. A.; Irvine, K. G.; Carter, C. H.
Applied Physics Letters, Vol. 68, Issue 2
https://doi.org/10.1063/1.116469

Power electronics on InAlN/(In)GaN: Prospect for a record performance
journal, November 2001

Kuzmik, J.
IEEE Electron Device Letters, Vol. 22, Issue 11
https://doi.org/10.1109/55.962646

Planar Nearly Ideal Edge-Termination Technique for GaN Devices
journal, March 2011

Ozbek, A. Merve; Baliga, B. Jayant
IEEE Electron Device Letters, Vol. 32, Issue 3
https://doi.org/10.1109/LED.2010.2095825

Tunneling Transistors Based on Graphene and 2-D Crystals
journal, June 2013

Jena, Debdeep
Proceedings of the IEEE, Vol. 101, Issue 7
https://doi.org/10.1109/JPROC.2013.2253435

Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction
journal, March 1998

Kuksenkov, D. V.; Temkin, H.; Osinsky, A.
Applied Physics Letters, Vol. 72, Issue 11
https://doi.org/10.1063/1.121056

Electrical characterization of GaN p-n junctions with and without threading dislocations
journal, August 1998

Kozodoy, P.; Ibbetson, J. P.; Marchand, H.
Applied Physics Letters, Vol. 73, Issue 7
https://doi.org/10.1063/1.122057

Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h
journal, January 2014

McSkimming, Brian M.; Wu, F.; Huault, Thomas
Journal of Crystal Growth, Vol. 386
https://doi.org/10.1016/j.jcrysgro.2013.10.013

GaN-Based RF Power Devices and Amplifiers
journal, February 2008

Mishra, U. K.; Kazior, T. E.
Proceedings of the IEEE, Vol. 96, Issue 2
https://doi.org/10.1109/JPROC.2007.911060

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
journal, January 1998

Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin-ichi
Applied Physics Letters, Vol. 72, Issue 2
https://doi.org/10.1063/1.120688

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
journal, May 2006

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
Nature, Vol. 441, Issue 7091, p. 325-328
https://doi.org/10.1038/nature04760

Yellow luminescence and related deep levels in unintentionally doped GaN films
journal, April 1999

Shalish, I.; Kronik, L.; Segal, G.
Physical Review B, Vol. 59, Issue 15
https://doi.org/10.1103/PhysRevB.59.9748

Similar records in OSTI.GOV collections:

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Journal Article Qi, Meng; Zhao, Yuning; Yan, Xiaodong; ... - Applied Physics Letters

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.
https://doi.org/10.1063/1.4936891
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Journal Article Cho, Minkyu; Xu, Zhiyu; Bakhtiary-Noodeh, Marzieh; ... - IEEE Transactions on Electron Devices

Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R_ONA ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R_ONA is 0.23 mΩ∙ cm² at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’smore »« less
https://doi.org/10.1109/ted.2023.3295767
Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Journal Article Nomoto, Kazuki; Li, Wenshen; Song, Bo; ... - Applied Physics Letters

Polarization-induced (Pi) distributed or bulk doping in GaN, with a zero dopant ionization energy, can reduce temperature or frequency dispersions in impurity-doped p–n junctions caused by the deep-acceptor-nature of Mg, thus offering GaN power devices promising prospects. Before comprehensively assessing the benefits of Pi-doping, ideal junction behaviors and high-voltage capabilities should be confirmed. In this work, we demonstrate near-ideal forward and reverse I–V characteristics in Pi-doped GaN power p–n diodes, which incorporates linearly graded, coherently strained AlGaN layers. Hall measurements show a net increase in the hole concentration of 8.9 × 1016 cm−3 in the p-layer as a result of the polarization charge.more »« less
https://doi.org/10.1063/5.0083302
High-voltage regrown nonpolar m-plane vertical p-n diodes: A step toward future selective-area-doped power switches

Journal Article Monavarian, M.; Pickrell, G.; Aragon, A.; ... - IEEE Electron Device Letters

Here, we report high-voltage regrown nonpolar m-plane p-n diodes on freestanding GaN substrates. Secondary-ion mass spectroscopy (SIMS) measurements indicate O and Si spikes at the regrowth interfaces with maximum concentration ~ 5×10¹⁷ cm^-3, which is similar to previously published c-plane studies. A high blocking voltage of 540 V at ~ 1 mA/cm2 (corresponding to an electric field of E ~ 3.35 MV/cm), turn-on voltages between 2.9-3.1 V, specific on-resistance of 1.7 mΩ.cm² at 300 A/cm², and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O and C interfacial impurity levels upmore »« less
Cited by 19
https://doi.org/10.1109/LED.2019.2892345

Full Text Available
Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $$(10\bar{1}0)$$ m -plane GaN substrates

Journal Article Fu, Houqiang; Zhang, Xiaodong; Fu, Kai; ... - Applied Physics Express

We report nonpolar vertical GaN-on-GaN p–n diodes grown on m-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 mΩ∙cm², and high on/off ratio of 10¹⁰. The reverse current leakage was described by a trap-assisted space-charge- limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. Finally, these results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices.
Cited by 15
https://doi.org/10.7567/APEX.11.111003

Full Text Available

Similar Records

Title: High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Abstract

Citation Formats

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon journal, April 2015

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents journal, November 2010

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier journal, November 2011

High Voltage Vertical GaN p-n Diodes With Avalanche Capability journal, October 2013

Direct electrical observation of plasma wave - related effects in GaN-based two-dimensional electron gases journal, October 2014

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance journal, May 2011

Low-Voltage Tunnel Transistors for Beyond CMOS Logic journal, December 2010

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates journal, December 2011

Electric breakdown in GaN p‐n junctions journal, January 1996

Power electronics on InAlN/(In)GaN: Prospect for a record performance journal, November 2001

Planar Nearly Ideal Edge-Termination Technique for GaN Devices journal, March 2011

Tunneling Transistors Based on Graphene and 2-D Crystals journal, June 2013

Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction journal, March 1998

Electrical characterization of GaN p-n junctions with and without threading dislocations journal, August 1998

Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h journal, January 2014

GaN-Based RF Power Devices and Amplifiers journal, February 2008

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate journal, January 1998

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres journal, May 2006

Yellow luminescence and related deep levels in unintentionally doped GaN films journal, April 1999

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon
journal, April 2015

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents
journal, November 2010

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
journal, November 2011

High Voltage Vertical GaN p-n Diodes With Avalanche Capability
journal, October 2013

Direct electrical observation of plasma wave - related effects in GaN-based two-dimensional electron gases
journal, October 2014

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
journal, May 2011

Low-Voltage Tunnel Transistors for Beyond CMOS Logic
journal, December 2010

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates
journal, December 2011

Electric breakdown in GaN p‐n junctions
journal, January 1996

Power electronics on InAlN/(In)GaN: Prospect for a record performance
journal, November 2001

Planar Nearly Ideal Edge-Termination Technique for GaN Devices
journal, March 2011

Tunneling Transistors Based on Graphene and 2-D Crystals
journal, June 2013

Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction
journal, March 1998

Electrical characterization of GaN p-n junctions with and without threading dislocations
journal, August 1998

Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h
journal, January 2014

GaN-Based RF Power Devices and Amplifiers
journal, February 2008

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
journal, January 1998

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
journal, May 2006

Yellow luminescence and related deep levels in unintentionally doped GaN films
journal, April 1999