Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

Park, J.; Ahn, Y.; Tilka, J. A.; Sampson, K. C.; Savage, D. E.; Prance, J. R.; Simmons, C. B.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.; Holt, M. V.; Evans, P. G.

doi:10.1063/1.4954054

Title: Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

Journal Article · Wed Jun 01 00:00:00 EDT 2016 · APL Materials

DOI:https://doi.org/10.1063/1.4954054· OSTI ID:1258327

Park, J.; Ahn, Y.; Tilka, J. A.; Sampson, K. C.; Savage, D. E.;

; Simmons, C. B.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.; Holt, M. V.;

Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

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Research Organization:: Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FG02‐03ER46028; AC02-06CH11357; FG02-04ER46147; DE‐FG02‐03ER46028

OSTI ID:: 1258327

Alternate ID(s):: OSTI ID: 1306380; OSTI ID: 1356353; OSTI ID: 1420555

Journal Information:: APL Materials, Journal Name: APL Materials Vol. 4 Journal Issue: 6; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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Title: Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

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